JPS61116891A - 半導体レ−ザアレイ装置 - Google Patents
半導体レ−ザアレイ装置Info
- Publication number
- JPS61116891A JPS61116891A JP23891584A JP23891584A JPS61116891A JP S61116891 A JPS61116891 A JP S61116891A JP 23891584 A JP23891584 A JP 23891584A JP 23891584 A JP23891584 A JP 23891584A JP S61116891 A JPS61116891 A JP S61116891A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- laser array
- lasers
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000010408 film Substances 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23891584A JPS61116891A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザアレイ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23891584A JPS61116891A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザアレイ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61116891A true JPS61116891A (ja) | 1986-06-04 |
| JPH0582757B2 JPH0582757B2 (https=) | 1993-11-22 |
Family
ID=17037160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23891584A Granted JPS61116891A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザアレイ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61116891A (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62102584A (ja) * | 1985-10-29 | 1987-05-13 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS62219589A (ja) * | 1986-03-19 | 1987-09-26 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPS63228793A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 半導体レ−ザ装置 |
| US4916710A (en) * | 1988-06-27 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Multi-point emission type semiconductor laser device therefor |
| US7194013B2 (en) | 2001-07-02 | 2007-03-20 | Nichia Corporation | GaN semiconductor laser device, and optical disk information system using the laser device |
| EP2928032A1 (en) * | 2014-02-04 | 2015-10-07 | Mitsubishi Electric Corporation | Semiconductor laser array with reduced speckle noise |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3028800U (ja) * | 1996-03-07 | 1996-09-13 | 村田機械株式会社 | ラックへの銘板の取付構造 |
-
1984
- 1984-11-13 JP JP23891584A patent/JPS61116891A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62102584A (ja) * | 1985-10-29 | 1987-05-13 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS62219589A (ja) * | 1986-03-19 | 1987-09-26 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPS63228793A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 半導体レ−ザ装置 |
| US4916710A (en) * | 1988-06-27 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Multi-point emission type semiconductor laser device therefor |
| US5047364A (en) * | 1988-06-27 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Method for making a multi-point emission type semiconductor laser device |
| US7194013B2 (en) | 2001-07-02 | 2007-03-20 | Nichia Corporation | GaN semiconductor laser device, and optical disk information system using the laser device |
| EP2928032A1 (en) * | 2014-02-04 | 2015-10-07 | Mitsubishi Electric Corporation | Semiconductor laser array with reduced speckle noise |
| US9466946B2 (en) | 2014-02-04 | 2016-10-11 | Mitsubishi Electric Corporation | Semiconductor laser array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582757B2 (https=) | 1993-11-22 |
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