JPH0580822B2 - - Google Patents

Info

Publication number
JPH0580822B2
JPH0580822B2 JP59018543A JP1854384A JPH0580822B2 JP H0580822 B2 JPH0580822 B2 JP H0580822B2 JP 59018543 A JP59018543 A JP 59018543A JP 1854384 A JP1854384 A JP 1854384A JP H0580822 B2 JPH0580822 B2 JP H0580822B2
Authority
JP
Japan
Prior art keywords
melting point
low melting
metal
metal film
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59018543A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60161651A (ja
Inventor
Koji Aono
Osamu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59018543A priority Critical patent/JPS60161651A/ja
Publication of JPS60161651A publication Critical patent/JPS60161651A/ja
Publication of JPH0580822B2 publication Critical patent/JPH0580822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/0245—
    • H10W20/20—
    • H10W20/2125—
    • H10W72/30—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP59018543A 1984-02-02 1984-02-02 半導体装置の製造方法 Granted JPS60161651A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59018543A JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59018543A JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60161651A JPS60161651A (ja) 1985-08-23
JPH0580822B2 true JPH0580822B2 (enExample) 1993-11-10

Family

ID=11974546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59018543A Granted JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60161651A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703908B2 (ja) * 1987-11-20 1998-01-26 日本電気株式会社 化合物半導体装置
JPH0777224B2 (ja) * 1988-07-18 1995-08-16 日本電気株式会社 モノリシック集積回路素子の製造方法
JPH0821598B2 (ja) * 1989-09-12 1996-03-04 三菱電機株式会社 半導体装置の製造方法
JP2803408B2 (ja) * 1991-10-03 1998-09-24 三菱電機株式会社 半導体装置
JP5228381B2 (ja) 2007-06-25 2013-07-03 三菱電機株式会社 半導体装置の製造方法
CN113809030B (zh) * 2021-11-16 2022-03-15 深圳市时代速信科技有限公司 半导体器件和半导体器件的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092682A (enExample) * 1973-12-14 1975-07-24
JPS5879773A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS60161651A (ja) 1985-08-23

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