JPS60161651A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60161651A
JPS60161651A JP59018543A JP1854384A JPS60161651A JP S60161651 A JPS60161651 A JP S60161651A JP 59018543 A JP59018543 A JP 59018543A JP 1854384 A JP1854384 A JP 1854384A JP S60161651 A JPS60161651 A JP S60161651A
Authority
JP
Japan
Prior art keywords
melting point
low melting
metal
metal film
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59018543A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580822B2 (enExample
Inventor
Koji Aono
青野　浩二
Osamu Ishihara
理 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59018543A priority Critical patent/JPS60161651A/ja
Publication of JPS60161651A publication Critical patent/JPS60161651A/ja
Publication of JPH0580822B2 publication Critical patent/JPH0580822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/0245—
    • H10W20/20—
    • H10W20/2125—
    • H10W72/30—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP59018543A 1984-02-02 1984-02-02 半導体装置の製造方法 Granted JPS60161651A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59018543A JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59018543A JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60161651A true JPS60161651A (ja) 1985-08-23
JPH0580822B2 JPH0580822B2 (enExample) 1993-11-10

Family

ID=11974546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59018543A Granted JPS60161651A (ja) 1984-02-02 1984-02-02 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60161651A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135030A (ja) * 1987-11-20 1989-05-26 Nec Corp 化合物半導体装置
JPH0228335A (ja) * 1988-07-18 1990-01-30 Nec Corp モノリシック集積回路素子の製造方法
JPH0399470A (ja) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH05102200A (ja) * 1991-10-03 1993-04-23 Mitsubishi Electric Corp 半導体装置
US7544611B2 (en) 2007-06-25 2009-06-09 Mitsubishi Electric Corporation Method of manufacturing III-V nitride semiconductor device
CN113809030A (zh) * 2021-11-16 2021-12-17 深圳市时代速信科技有限公司 半导体器件和半导体器件的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092682A (enExample) * 1973-12-14 1975-07-24
JPS5879773A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd 電界効果トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092682A (enExample) * 1973-12-14 1975-07-24
JPS5879773A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd 電界効果トランジスタ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135030A (ja) * 1987-11-20 1989-05-26 Nec Corp 化合物半導体装置
JPH0228335A (ja) * 1988-07-18 1990-01-30 Nec Corp モノリシック集積回路素子の製造方法
JPH0399470A (ja) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH05102200A (ja) * 1991-10-03 1993-04-23 Mitsubishi Electric Corp 半導体装置
US7544611B2 (en) 2007-06-25 2009-06-09 Mitsubishi Electric Corporation Method of manufacturing III-V nitride semiconductor device
CN113809030A (zh) * 2021-11-16 2021-12-17 深圳市时代速信科技有限公司 半导体器件和半导体器件的制备方法

Also Published As

Publication number Publication date
JPH0580822B2 (enExample) 1993-11-10

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