JPH0578921B2 - - Google Patents
Info
- Publication number
- JPH0578921B2 JPH0578921B2 JP23570884A JP23570884A JPH0578921B2 JP H0578921 B2 JPH0578921 B2 JP H0578921B2 JP 23570884 A JP23570884 A JP 23570884A JP 23570884 A JP23570884 A JP 23570884A JP H0578921 B2 JPH0578921 B2 JP H0578921B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- oxide
- resistance value
- sensor
- over time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 claims description 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 229910000480 nickel oxide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052596 spinel Inorganic materials 0.000 description 5
- 239000011029 spinel Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000011572 manganese Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019580 Cr Zr Inorganic materials 0.000 description 2
- 229910019817 Cr—Zr Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910019589 Cr—Fe Inorganic materials 0.000 description 1
- 229910003023 Mg-Al Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910003310 Ni-Al Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004125 X-ray microanalysis Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23570884A JPS61113203A (ja) | 1984-11-08 | 1984-11-08 | サ−ミスタ用酸化物半導体の製造方法 |
| DE8585905664T DE3581807D1 (de) | 1984-11-08 | 1985-11-06 | Halbleiteroxyd fuer thermistor und dessen herstellung. |
| PCT/JP1985/000616 WO1986003051A1 (fr) | 1984-11-08 | 1985-11-06 | Semi-conducteur a oxyde pour thermistor et procede de production |
| US06/902,445 US4891158A (en) | 1984-11-08 | 1985-11-06 | Oxide semiconductor for thermistor and manufacturing method thereof |
| EP85905664A EP0207994B1 (fr) | 1984-11-08 | 1985-11-06 | Semi-conducteur a oxyde pour thermistor et procede de production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23570884A JPS61113203A (ja) | 1984-11-08 | 1984-11-08 | サ−ミスタ用酸化物半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61113203A JPS61113203A (ja) | 1986-05-31 |
| JPH0578921B2 true JPH0578921B2 (fr) | 1993-10-29 |
Family
ID=16990049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23570884A Granted JPS61113203A (ja) | 1984-11-08 | 1984-11-08 | サ−ミスタ用酸化物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61113203A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059755A (ja) * | 2007-08-30 | 2009-03-19 | Oizumi Seisakusho:Kk | Ｎｔｃサーミスタ用電極 |
| JP5158487B2 (ja) * | 2008-01-23 | 2013-03-06 | 三菱マテリアル株式会社 | サーミスタ用金属酸化物焼結体及びサーミスタ素子並びにサーミスタ用金属酸化物焼結体の製造方法 |
-
1984
- 1984-11-08 JP JP23570884A patent/JPS61113203A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61113203A (ja) | 1986-05-31 |
Similar Documents
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