DE3581807D1 - Halbleiteroxyd fuer thermistor und dessen herstellung. - Google Patents

Halbleiteroxyd fuer thermistor und dessen herstellung.

Info

Publication number
DE3581807D1
DE3581807D1 DE8585905664T DE3581807T DE3581807D1 DE 3581807 D1 DE3581807 D1 DE 3581807D1 DE 8585905664 T DE8585905664 T DE 8585905664T DE 3581807 T DE3581807 T DE 3581807T DE 3581807 D1 DE3581807 D1 DE 3581807D1
Authority
DE
Germany
Prior art keywords
thermistor
production
semiconductor oxide
semiconductor
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585905664T
Other languages
English (en)
Inventor
Neya Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23570884A external-priority patent/JPS61113203A/ja
Priority claimed from JP23571684A external-priority patent/JPS61113211A/ja
Priority claimed from JP23571184A external-priority patent/JPS61113206A/ja
Priority claimed from JP59245099A external-priority patent/JPS61122156A/ja
Priority claimed from JP735185A external-priority patent/JPS61168204A/ja
Priority claimed from JP735285A external-priority patent/JPS61168205A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3581807D1 publication Critical patent/DE3581807D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE8585905664T 1984-11-08 1985-11-06 Halbleiteroxyd fuer thermistor und dessen herstellung. Expired - Lifetime DE3581807D1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP23570884A JPS61113203A (ja) 1984-11-08 1984-11-08 サ−ミスタ用酸化物半導体の製造方法
JP23571684A JPS61113211A (ja) 1984-11-08 1984-11-08 サ−ミスタ用酸化物半導体
JP23571184A JPS61113206A (ja) 1984-11-08 1984-11-08 サ−ミスタ用酸化物半導体の製造方法
JP59245099A JPS61122156A (ja) 1984-11-20 1984-11-20 サ−ミスタ用酸化物半導体の製造方法
JP735185A JPS61168204A (ja) 1985-01-21 1985-01-21 サ−ミスタ用酸化物半導体の製造方法
JP735285A JPS61168205A (ja) 1985-01-21 1985-01-21 サ−ミスタ用酸化物半導体の製造方法
PCT/JP1985/000616 WO1986003051A1 (en) 1984-11-08 1985-11-06 Oxide semiconductor for thermistor and a method of producing the same

Publications (1)

Publication Number Publication Date
DE3581807D1 true DE3581807D1 (de) 1991-03-28

Family

ID=27548049

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585905664T Expired - Lifetime DE3581807D1 (de) 1984-11-08 1985-11-06 Halbleiteroxyd fuer thermistor und dessen herstellung.

Country Status (4)

Country Link
US (1) US4891158A (de)
EP (1) EP0207994B1 (de)
DE (1) DE3581807D1 (de)
WO (1) WO1986003051A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970027A (en) * 1987-02-28 1990-11-13 Taiyo Yuden Co., Ltd. Electrical resistors, electrical resistor paste and method for making the same
DE3785750T2 (de) * 1987-02-28 1993-09-02 Taiyo Yuden Kk Elektrische widerstaende, elektrische widerstandspaste und herstellungsverfahren.
US5246628A (en) * 1990-08-16 1993-09-21 Korea Institute Of Science & Technology Metal oxide group thermistor material
JP3254594B2 (ja) * 1993-05-24 2002-02-12 日本特殊陶業株式会社 サーミスタ用磁器組成物およびサーミスタ素子
EP0638910B1 (de) * 1993-08-13 2002-11-20 Epcos Ag Sinterkeramik für stabile Hochtemperatur-Thermistoren und Verfahren zu ihrer Herstellung
DE69500411T2 (de) * 1994-04-27 1997-10-23 Matsushita Electric Ind Co Ltd Temperatursensor
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
US5879750A (en) * 1996-03-29 1999-03-09 Denso Corporation Method for manufacturing thermistor materials and thermistors
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
EP0917717A4 (de) * 1996-06-17 2000-11-08 Thermometrics Inc Sensoren und verfahren zu deren herstellung aus einem gemeinsamen wafer
WO1997048644A1 (en) * 1996-06-17 1997-12-24 Thermometrics, Inc. Growth of nickel-cobalt-manganese oxide single crystals
US5936513A (en) * 1996-08-23 1999-08-10 Thermometrics, Inc. Nickel-iron-manganese oxide single crystals
JP3711857B2 (ja) * 2000-10-11 2005-11-02 株式会社村田製作所 負の抵抗温度特性を有する半導体磁器組成物及び負特性サーミスタ
US7138901B2 (en) * 2004-03-30 2006-11-21 General Electric Company Temperature measuring device and system and method incorporating the same
JP5256897B2 (ja) * 2007-08-03 2013-08-07 三菱マテリアル株式会社 サーミスタ用金属酸化物焼結体、サーミスタ素子及びサーミスタ温度センサ並びにサーミスタ用金属酸化物焼結体の製造方法
JP5526552B2 (ja) * 2009-01-30 2014-06-18 三菱マテリアル株式会社 サーミスタ用金属酸化物焼結体、サーミスタ素子及びサーミスタ温度センサ並びにサーミスタ用金属酸化物焼結体の製造方法
CN101763926B (zh) * 2010-02-25 2012-03-21 深圳市三宝创业科技有限公司 一种正温度系数热敏电阻器及其制备方法
TWI612538B (zh) * 2016-08-03 2018-01-21 國立屏東科技大學 薄膜電阻合金

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090790B (de) * 1957-12-11 1960-10-13 Max Planck Inst Eisenforschung Keramischer, Chromoxyd enthaltender Heizleiter, insbesondere fuer Hochtemperaturoefen
GB874882A (en) * 1959-06-05 1961-08-10 Standard Telephones Cables Ltd Thermistors
JPS5439920B2 (de) * 1973-06-21 1979-11-30
JPS5588305A (en) * 1978-12-27 1980-07-04 Mitsui Mining & Smelting Co Thermistor composition
JPS5628510A (en) * 1979-08-17 1981-03-20 Matsushita Electric Ind Co Ltd Current miller circuit
CA1147945A (en) * 1979-11-02 1983-06-14 Takayuki Kuroda Oxide thermistor compositions
JPS57184206A (en) * 1981-05-08 1982-11-12 Matsushita Electric Ind Co Ltd Oxide semiconductor for thermistor
JPS6022302A (ja) * 1983-07-18 1985-02-04 松下電器産業株式会社 サ−ミスタ用酸化物半導体

Also Published As

Publication number Publication date
US4891158A (en) 1990-01-02
EP0207994A4 (de) 1987-11-30
EP0207994A1 (de) 1987-01-14
EP0207994B1 (de) 1991-02-20
WO1986003051A1 (en) 1986-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)