JPH0563948B2 - - Google Patents

Info

Publication number
JPH0563948B2
JPH0563948B2 JP58128418A JP12841883A JPH0563948B2 JP H0563948 B2 JPH0563948 B2 JP H0563948B2 JP 58128418 A JP58128418 A JP 58128418A JP 12841883 A JP12841883 A JP 12841883A JP H0563948 B2 JPH0563948 B2 JP H0563948B2
Authority
JP
Japan
Prior art keywords
thin film
gate
single crystal
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58128418A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6020582A (ja
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58128418A priority Critical patent/JPS6020582A/ja
Publication of JPS6020582A publication Critical patent/JPS6020582A/ja
Publication of JPH0563948B2 publication Critical patent/JPH0563948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes

Landscapes

  • Thin Film Transistor (AREA)
JP58128418A 1983-07-14 1983-07-14 Ｍｉｓトランジスタ及びその製造方法 Granted JPS6020582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58128418A JPS6020582A (ja) 1983-07-14 1983-07-14 Ｍｉｓトランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58128418A JPS6020582A (ja) 1983-07-14 1983-07-14 Ｍｉｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6020582A JPS6020582A (ja) 1985-02-01
JPH0563948B2 true JPH0563948B2 (enExample) 1993-09-13

Family

ID=14984265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58128418A Granted JPS6020582A (ja) 1983-07-14 1983-07-14 Ｍｉｓトランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6020582A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283068A (ja) * 1987-05-14 1988-11-18 Sharp Corp 薄膜トランジスタの製造方法
JPH0298969A (ja) * 1988-10-06 1990-04-11 Agency Of Ind Science & Technol Ｍｏｓトランジスタおよびその製造方法
JPH04226079A (ja) * 1990-04-17 1992-08-14 Canon Inc 半導体装置及びその製造方法及びそれを有する電子回路装置
FR2799307B1 (fr) * 1999-10-01 2002-02-15 France Telecom Dispositif semi-conducteur combinant les avantages des architectures massives et soi, procede de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828507B2 (ja) * 1982-03-16 1996-03-21 セイコーエプソン株式会社 半導体装置

Also Published As

Publication number Publication date
JPS6020582A (ja) 1985-02-01

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