JPH0563944B2 - - Google Patents
Info
- Publication number
- JPH0563944B2 JPH0563944B2 JP58108108A JP10810883A JPH0563944B2 JP H0563944 B2 JPH0563944 B2 JP H0563944B2 JP 58108108 A JP58108108 A JP 58108108A JP 10810883 A JP10810883 A JP 10810883A JP H0563944 B2 JPH0563944 B2 JP H0563944B2
- Authority
- JP
- Japan
- Prior art keywords
- cell
- metal wiring
- layer metal
- wiring
- basic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10810883A JPS59232442A (ja) | 1983-06-16 | 1983-06-16 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10810883A JPS59232442A (ja) | 1983-06-16 | 1983-06-16 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59232442A JPS59232442A (ja) | 1984-12-27 |
JPH0563944B2 true JPH0563944B2 (de) | 1993-09-13 |
Family
ID=14476089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10810883A Granted JPS59232442A (ja) | 1983-06-16 | 1983-06-16 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59232442A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0644613B2 (ja) * | 1985-10-22 | 1994-06-08 | 日本電気株式会社 | 半導体装置 |
JPH05136380A (ja) * | 1991-11-13 | 1993-06-01 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
KR100229577B1 (ko) * | 1996-01-31 | 1999-11-15 | 포만 제프리 엘 | 게이트 어레이 셀 및 이것을 포함한 집적 회로 칩 |
JP2008147331A (ja) * | 2006-12-08 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体集積回路及び半導体集積回路の修正方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5120268A (en) * | 1974-08-08 | 1976-02-18 | Takashi Ishikawa | Taika * tainetsusei goseijushi |
JPS5582450A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Semiconductor integrated circuit |
JPS586157A (ja) * | 1981-07-03 | 1983-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Cmosマスタ・スライスlsi |
-
1983
- 1983-06-16 JP JP10810883A patent/JPS59232442A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5120268A (en) * | 1974-08-08 | 1976-02-18 | Takashi Ishikawa | Taika * tainetsusei goseijushi |
JPS5582450A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Semiconductor integrated circuit |
JPS586157A (ja) * | 1981-07-03 | 1983-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Cmosマスタ・スライスlsi |
Also Published As
Publication number | Publication date |
---|---|
JPS59232442A (ja) | 1984-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3179800B2 (ja) | 半導体集積回路装置 | |
JPH10335612A (ja) | 高密度ゲートアレイセル構造およびその製造方法 | |
JPS59163837A (ja) | 半導体集積回路 | |
JPH0831578B2 (ja) | マスタ−スライス方式のゲ−トアレ−半導体集積回路装置 | |
JPH0434309B2 (de) | ||
JPS58139446A (ja) | 半導体集積回路装置 | |
JPH0563944B2 (de) | ||
EP0119059A2 (de) | Integrierte Halbleiterschaltung mit Gattermatrixstruktur | |
JPH0122733B2 (de) | ||
JP2000223575A (ja) | 半導体装置の設計方法、半導体装置および半導体装置の製造方法 | |
JPH0254670B2 (de) | ||
JPH0475664B2 (de) | ||
JPS63140A (ja) | 半導体集積回路装置 | |
JPS6074647A (ja) | 半導体集積回路装置 | |
JPS5929440A (ja) | 半導体集積回路装置 | |
JPS6135535A (ja) | マスタ−スライス集積回路装置 | |
JPH023279A (ja) | 相補型misマスタスライスlsiの基本セル | |
JPH0250626B2 (de) | ||
JPS60110137A (ja) | 半導体装置 | |
JPS62183140A (ja) | 半導体集積回路装置 | |
JPH073863B2 (ja) | 半導体集積回路 | |
JPS59163836A (ja) | 半導体集積回路 | |
JPS6329545A (ja) | 半導体集積回路装置 | |
JPH02280353A (ja) | 半導体集積回路 | |
KR920005798B1 (ko) | 보더레스 마스터 슬라이스 반도체장치 |