JPH0554269B2 - - Google Patents
Info
- Publication number
- JPH0554269B2 JPH0554269B2 JP59055293A JP5529384A JPH0554269B2 JP H0554269 B2 JPH0554269 B2 JP H0554269B2 JP 59055293 A JP59055293 A JP 59055293A JP 5529384 A JP5529384 A JP 5529384A JP H0554269 B2 JPH0554269 B2 JP H0554269B2
- Authority
- JP
- Japan
- Prior art keywords
- shot
- film
- semiconductor device
- forming
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000137 annealing Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 25
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5529384A JPS60200575A (ja) | 1984-03-24 | 1984-03-24 | シヨツトキ半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5529384A JPS60200575A (ja) | 1984-03-24 | 1984-03-24 | シヨツトキ半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60200575A JPS60200575A (ja) | 1985-10-11 |
| JPH0554269B2 true JPH0554269B2 (ko) | 1993-08-12 |
Family
ID=12994527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5529384A Granted JPS60200575A (ja) | 1984-03-24 | 1984-03-24 | シヨツトキ半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60200575A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1939832A1 (fr) | 2006-12-26 | 2008-07-02 | Somfy SAS | Capteur-émetteur de sécurité pour la détection de vent dans une installation domotique |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661235B2 (ja) * | 1989-02-06 | 1997-10-08 | 富士通株式会社 | 半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128875A (en) * | 1979-03-27 | 1980-10-06 | Nec Corp | Semiconductor device |
-
1984
- 1984-03-24 JP JP5529384A patent/JPS60200575A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128875A (en) * | 1979-03-27 | 1980-10-06 | Nec Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1939832A1 (fr) | 2006-12-26 | 2008-07-02 | Somfy SAS | Capteur-émetteur de sécurité pour la détection de vent dans une installation domotique |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60200575A (ja) | 1985-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |