JPH0548630B2 - - Google Patents

Info

Publication number
JPH0548630B2
JPH0548630B2 JP61000212A JP21286A JPH0548630B2 JP H0548630 B2 JPH0548630 B2 JP H0548630B2 JP 61000212 A JP61000212 A JP 61000212A JP 21286 A JP21286 A JP 21286A JP H0548630 B2 JPH0548630 B2 JP H0548630B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
type semiconductor
conductivity type
thyristor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61000212A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62158364A (ja
Inventor
Junichi Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61000212A priority Critical patent/JPS62158364A/ja
Publication of JPS62158364A publication Critical patent/JPS62158364A/ja
Publication of JPH0548630B2 publication Critical patent/JPH0548630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors

Landscapes

  • Thyristors (AREA)
JP61000212A 1986-01-07 1986-01-07 プレ−ナ型サイリスタの製造方法 Granted JPS62158364A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61000212A JPS62158364A (ja) 1986-01-07 1986-01-07 プレ−ナ型サイリスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61000212A JPS62158364A (ja) 1986-01-07 1986-01-07 プレ−ナ型サイリスタの製造方法

Publications (2)

Publication Number Publication Date
JPS62158364A JPS62158364A (ja) 1987-07-14
JPH0548630B2 true JPH0548630B2 (enrdf_load_stackoverflow) 1993-07-22

Family

ID=11467653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61000212A Granted JPS62158364A (ja) 1986-01-07 1986-01-07 プレ−ナ型サイリスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62158364A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49136166U (enrdf_load_stackoverflow) * 1973-03-23 1974-11-22
JPS5887870A (ja) * 1981-11-20 1983-05-25 Nec Corp サイリスタの製造方法
JPS58186966A (ja) * 1982-04-23 1983-11-01 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS62158364A (ja) 1987-07-14

Similar Documents

Publication Publication Date Title
JPH05175537A (ja) フォトダイオードアレイおよびその製造法
JPS5915495B2 (ja) 半導体装置
US3817794A (en) Method for making high-gain transistors
JPS577959A (en) Semiconductor device
JPS5975659A (ja) 半導体装置の製造方法
US4014718A (en) Method of making integrated circuits free from the formation of a parasitic PNPN thyristor
JPH0548630B2 (enrdf_load_stackoverflow)
JPH07235660A (ja) サイリスタの製造方法
JPS60117755A (ja) 半導体装置の製造方法
JPS6120141B2 (enrdf_load_stackoverflow)
JP2857206B2 (ja) 縦型サイリスタの製造方法
JPS59150471A (ja) 半導体装置
JP3108208B2 (ja) 半導体装置の製造方法
JPS5877240A (ja) 半導体装置とその製造方法
JPH04323832A (ja) 半導体装置およびその製造方法
JPS63144543A (ja) 半導体素子間分離領域の形成方法
JPH02260529A (ja) メッキ電極の製造方法
JPS6010642A (ja) 半導体装置の製造方法
JPS62105427A (ja) ガラス被覆半導体チツプの製造方法
JPH01243581A (ja) 半導体集積回路装置の製造方法
JPS60182149A (ja) 半導体集積回路の製造方法
JPS58184739A (ja) 半導体装置の製造方法
JPS60198862A (ja) 半導体集積回路装置
JPH06224290A (ja) 半導体装置の製造方法
JPS6115589B2 (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees