JPH0547996B2 - - Google Patents

Info

Publication number
JPH0547996B2
JPH0547996B2 JP57192678A JP19267882A JPH0547996B2 JP H0547996 B2 JPH0547996 B2 JP H0547996B2 JP 57192678 A JP57192678 A JP 57192678A JP 19267882 A JP19267882 A JP 19267882A JP H0547996 B2 JPH0547996 B2 JP H0547996B2
Authority
JP
Japan
Prior art keywords
layer
melt
light emitting
liquid phase
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57192678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5980981A (ja
Inventor
Kentaro Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP57192678A priority Critical patent/JPS5980981A/ja
Publication of JPS5980981A publication Critical patent/JPS5980981A/ja
Priority to JP5001109A priority patent/JPH05335621A/ja
Publication of JPH0547996B2 publication Critical patent/JPH0547996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57192678A 1982-11-01 1982-11-01 ガリウム燐緑色発光ダイオードの製造方法 Granted JPS5980981A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57192678A JPS5980981A (ja) 1982-11-01 1982-11-01 ガリウム燐緑色発光ダイオードの製造方法
JP5001109A JPH05335621A (ja) 1982-11-01 1993-01-07 ガリウム燐緑色発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57192678A JPS5980981A (ja) 1982-11-01 1982-11-01 ガリウム燐緑色発光ダイオードの製造方法
JP5001109A JPH05335621A (ja) 1982-11-01 1993-01-07 ガリウム燐緑色発光ダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5001109A Division JPH05335621A (ja) 1982-11-01 1993-01-07 ガリウム燐緑色発光ダイオード

Publications (2)

Publication Number Publication Date
JPS5980981A JPS5980981A (ja) 1984-05-10
JPH0547996B2 true JPH0547996B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=26334274

Family Applications (2)

Application Number Title Priority Date Filing Date
JP57192678A Granted JPS5980981A (ja) 1982-11-01 1982-11-01 ガリウム燐緑色発光ダイオードの製造方法
JP5001109A Pending JPH05335621A (ja) 1982-11-01 1993-01-07 ガリウム燐緑色発光ダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP5001109A Pending JPH05335621A (ja) 1982-11-01 1993-01-07 ガリウム燐緑色発光ダイオード

Country Status (1)

Country Link
JP (2) JPS5980981A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922374A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 緑色発光ダイオ−ドの製造方法
JP3163217B2 (ja) * 1994-05-31 2001-05-08 シャープ株式会社 発光ダイオード及びその製造方法
KR100761929B1 (ko) * 1999-10-29 2007-09-28 신에쯔 한도타이 가부시키가이샤 인화갈륨 발광소자 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945234B2 (ja) * 1976-10-12 1984-11-05 サンケン電気株式会社 ＧａＰ 発光ダイオ−ド
JPS5453975A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS5513884A (en) * 1978-07-17 1980-01-31 Shionogi & Co Ltd Aggregation reacting antigen and its manufacture
JPS606552B2 (ja) * 1979-02-15 1985-02-19 株式会社東芝 リン化ガリウム緑色発光素子
JPS5694678A (en) * 1979-12-27 1981-07-31 Sanyo Electric Co Ltd Manufacture of lightemitting diode

Also Published As

Publication number Publication date
JPS5980981A (ja) 1984-05-10
JPH05335621A (ja) 1993-12-17

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