JPH0544759B2 - - Google Patents
Info
- Publication number
- JPH0544759B2 JPH0544759B2 JP7961684A JP7961684A JPH0544759B2 JP H0544759 B2 JPH0544759 B2 JP H0544759B2 JP 7961684 A JP7961684 A JP 7961684A JP 7961684 A JP7961684 A JP 7961684A JP H0544759 B2 JPH0544759 B2 JP H0544759B2
- Authority
- JP
- Japan
- Prior art keywords
- data line
- transistor
- common data
- memory element
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 61
- 239000011159 matrix material Substances 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Microcomputers (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079616A JPS60224197A (ja) | 1984-04-20 | 1984-04-20 | 記憶素子回路およびそれを用いたマイクロコンピュータ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079616A JPS60224197A (ja) | 1984-04-20 | 1984-04-20 | 記憶素子回路およびそれを用いたマイクロコンピュータ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60224197A JPS60224197A (ja) | 1985-11-08 |
| JPH0544759B2 true JPH0544759B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Family
ID=13694986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59079616A Granted JPS60224197A (ja) | 1984-04-20 | 1984-04-20 | 記憶素子回路およびそれを用いたマイクロコンピュータ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60224197A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017224381A (ja) * | 2013-03-14 | 2017-12-21 | シリコン ストーリッジ テクノロージー インコーポレイテッドSilicon Storage Technology, Inc. | 高度ナノメートルフラッシュメモリ装置において使用される改良形トランジスタ設計 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62170097A (ja) * | 1986-01-21 | 1987-07-27 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0212693A (ja) * | 1988-06-30 | 1990-01-17 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0814995B2 (ja) * | 1989-01-27 | 1996-02-14 | 株式会社東芝 | 半導体メモリ |
| JPH02285593A (ja) * | 1989-04-26 | 1990-11-22 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JP2913926B2 (ja) * | 1991-08-29 | 1999-06-28 | 日本電気株式会社 | 半導体記憶装置 |
| FR2714202B1 (fr) * | 1993-12-22 | 1996-01-12 | Sgs Thomson Microelectronics | Mémoire en circuit intégré à temps de lecture amélioré. |
| US6108237A (en) | 1997-07-17 | 2000-08-22 | Micron Technology, Inc. | Fast-sensing amplifier for flash memory |
| US5682496A (en) | 1995-02-10 | 1997-10-28 | Micron Quantum Devices, Inc. | Filtered serial event controlled command port for memory |
| US5737273A (en) * | 1995-04-06 | 1998-04-07 | Ricoh Company, Ltd. | Sense amplifier and reading circuit with sense amplifier |
-
1984
- 1984-04-20 JP JP59079616A patent/JPS60224197A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017224381A (ja) * | 2013-03-14 | 2017-12-21 | シリコン ストーリッジ テクノロージー インコーポレイテッドSilicon Storage Technology, Inc. | 高度ナノメートルフラッシュメモリ装置において使用される改良形トランジスタ設計 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60224197A (ja) | 1985-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |