JPS60224197A - 記憶素子回路およびそれを用いたマイクロコンピュータ - Google Patents

記憶素子回路およびそれを用いたマイクロコンピュータ

Info

Publication number
JPS60224197A
JPS60224197A JP59079616A JP7961684A JPS60224197A JP S60224197 A JPS60224197 A JP S60224197A JP 59079616 A JP59079616 A JP 59079616A JP 7961684 A JP7961684 A JP 7961684A JP S60224197 A JPS60224197 A JP S60224197A
Authority
JP
Japan
Prior art keywords
data line
transistor
memory element
precharging
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59079616A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544759B2 (enrdf_load_stackoverflow
Inventor
Terumi Sawase
沢瀬　照美
Hideo Nakamura
英夫 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59079616A priority Critical patent/JPS60224197A/ja
Publication of JPS60224197A publication Critical patent/JPS60224197A/ja
Publication of JPH0544759B2 publication Critical patent/JPH0544759B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Microcomputers (AREA)
  • Read Only Memory (AREA)
JP59079616A 1984-04-20 1984-04-20 記憶素子回路およびそれを用いたマイクロコンピュータ Granted JPS60224197A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59079616A JPS60224197A (ja) 1984-04-20 1984-04-20 記憶素子回路およびそれを用いたマイクロコンピュータ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079616A JPS60224197A (ja) 1984-04-20 1984-04-20 記憶素子回路およびそれを用いたマイクロコンピュータ

Publications (2)

Publication Number Publication Date
JPS60224197A true JPS60224197A (ja) 1985-11-08
JPH0544759B2 JPH0544759B2 (enrdf_load_stackoverflow) 1993-07-07

Family

ID=13694986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59079616A Granted JPS60224197A (ja) 1984-04-20 1984-04-20 記憶素子回路およびそれを用いたマイクロコンピュータ

Country Status (1)

Country Link
JP (1) JPS60224197A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
JPH0212693A (ja) * 1988-06-30 1990-01-17 Fujitsu Ltd 半導体記憶装置
JPH02199699A (ja) * 1989-01-27 1990-08-08 Toshiba Corp 半導体メモリ
JPH02285593A (ja) * 1989-04-26 1990-11-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0562482A (ja) * 1991-08-29 1993-03-12 Nec Corp 半導体記憶装置
JPH07320493A (ja) * 1993-12-22 1995-12-08 Sgs Thomson Microelectron Sa アクセス時間が改良された集積回路メモリ
US5729499A (en) * 1995-04-06 1998-03-17 Ricoh Company, Ltd. Sense amplifier and reading circuit with sense amplifier
US6525967B1 (en) 1995-02-10 2003-02-25 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US6578124B1 (en) 1995-02-10 2003-06-10 Micron Technology, Inc. Serial command port method, circuit, and system including main and command clock generators to filter signals of less than a predetermined duration

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9268899B2 (en) * 2013-03-14 2016-02-23 Silicon Storage Technology, Inc. Transistor design for use in advanced nanometer flash memory devices

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
JPH0212693A (ja) * 1988-06-30 1990-01-17 Fujitsu Ltd 半導体記憶装置
JPH02199699A (ja) * 1989-01-27 1990-08-08 Toshiba Corp 半導体メモリ
JPH02285593A (ja) * 1989-04-26 1990-11-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0562482A (ja) * 1991-08-29 1993-03-12 Nec Corp 半導体記憶装置
JPH07320493A (ja) * 1993-12-22 1995-12-08 Sgs Thomson Microelectron Sa アクセス時間が改良された集積回路メモリ
US6578124B1 (en) 1995-02-10 2003-06-10 Micron Technology, Inc. Serial command port method, circuit, and system including main and command clock generators to filter signals of less than a predetermined duration
US6525967B1 (en) 1995-02-10 2003-02-25 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US6581146B1 (en) 1995-02-10 2003-06-17 Micron Technology, Inc. Serial command port method, circuit, and system including main and command clock generators to filter signals of less than a predetermined duration
US6744673B2 (en) 1995-02-10 2004-06-01 Micron Technology, Inc. Feedback biasing integrated circuit
US6914822B2 (en) 1995-02-10 2005-07-05 Micron Technology Inc. Read-biasing and amplifying system
US6996010B2 (en) 1995-02-10 2006-02-07 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5737273A (en) * 1995-04-06 1998-04-07 Ricoh Company, Ltd. Sense amplifier and reading circuit with sense amplifier
US5729499A (en) * 1995-04-06 1998-03-17 Ricoh Company, Ltd. Sense amplifier and reading circuit with sense amplifier

Also Published As

Publication number Publication date
JPH0544759B2 (enrdf_load_stackoverflow) 1993-07-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term