JPH0542137B2 - - Google Patents

Info

Publication number
JPH0542137B2
JPH0542137B2 JP62137134A JP13713487A JPH0542137B2 JP H0542137 B2 JPH0542137 B2 JP H0542137B2 JP 62137134 A JP62137134 A JP 62137134A JP 13713487 A JP13713487 A JP 13713487A JP H0542137 B2 JPH0542137 B2 JP H0542137B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
thin film
source
drain
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62137134A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63300566A (ja
Inventor
Hiroya Sato
Atsushi Kudo
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62137134A priority Critical patent/JPS63300566A/ja
Publication of JPS63300566A publication Critical patent/JPS63300566A/ja
Publication of JPH0542137B2 publication Critical patent/JPH0542137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes

Landscapes

  • Thin Film Transistor (AREA)
JP62137134A 1987-05-29 1987-05-29 薄膜トランジスタの製造方法 Granted JPS63300566A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62137134A JPS63300566A (ja) 1987-05-29 1987-05-29 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62137134A JPS63300566A (ja) 1987-05-29 1987-05-29 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63300566A JPS63300566A (ja) 1988-12-07
JPH0542137B2 true JPH0542137B2 (enrdf_load_stackoverflow) 1993-06-25

Family

ID=15191613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62137134A Granted JPS63300566A (ja) 1987-05-29 1987-05-29 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63300566A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108953A (en) * 1989-02-02 1992-04-28 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductive device comprising a refractory metal silicide thin film
EP0456059B1 (en) * 1990-04-27 1996-08-28 Nec Corporation Thin-film-transistor having Schottky barrier
KR100699462B1 (ko) * 2005-12-07 2007-03-28 한국전자통신연구원 쇼트키 장벽 관통 트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
JPS63300566A (ja) 1988-12-07

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