JPH0519831B2 - - Google Patents
Info
- Publication number
- JPH0519831B2 JPH0519831B2 JP58109928A JP10992883A JPH0519831B2 JP H0519831 B2 JPH0519831 B2 JP H0519831B2 JP 58109928 A JP58109928 A JP 58109928A JP 10992883 A JP10992883 A JP 10992883A JP H0519831 B2 JPH0519831 B2 JP H0519831B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- region
- insulating film
- main electrode
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109928A JPS601868A (ja) | 1983-06-17 | 1983-06-17 | 薄膜トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109928A JPS601868A (ja) | 1983-06-17 | 1983-06-17 | 薄膜トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS601868A JPS601868A (ja) | 1985-01-08 |
| JPH0519831B2 true JPH0519831B2 (enrdf_load_stackoverflow) | 1993-03-17 |
Family
ID=14522661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58109928A Granted JPS601868A (ja) | 1983-06-17 | 1983-06-17 | 薄膜トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS601868A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6089958A (ja) * | 1983-10-24 | 1985-05-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JPH07120803B2 (ja) * | 1985-08-12 | 1995-12-20 | 日本電信電話株式会社 | 絶縁ゲ−ト型薄膜トランジスタ及びその製法 |
| KR950001159B1 (ko) * | 1991-12-27 | 1995-02-11 | 삼성전자 주식회사 | 반도체 메모리장치의 박막트랜지스터 및 그 제조방법 |
| KR102551998B1 (ko) * | 2018-11-20 | 2023-07-06 | 엘지디스플레이 주식회사 | 수직 구조 트랜지스터 및 전자장치 |
-
1983
- 1983-06-17 JP JP58109928A patent/JPS601868A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS601868A (ja) | 1985-01-08 |
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