JPH0519312B2 - - Google Patents

Info

Publication number
JPH0519312B2
JPH0519312B2 JP59064675A JP6467584A JPH0519312B2 JP H0519312 B2 JPH0519312 B2 JP H0519312B2 JP 59064675 A JP59064675 A JP 59064675A JP 6467584 A JP6467584 A JP 6467584A JP H0519312 B2 JPH0519312 B2 JP H0519312B2
Authority
JP
Japan
Prior art keywords
sit
forming
region
pmos
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59064675A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60207368A (ja
Inventor
Junichi Nishizawa
Sohee Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINGIJUTSU JIGYODAN
Original Assignee
SHINGIJUTSU JIGYODAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINGIJUTSU JIGYODAN filed Critical SHINGIJUTSU JIGYODAN
Priority to JP59064675A priority Critical patent/JPS60207368A/ja
Publication of JPS60207368A publication Critical patent/JPS60207368A/ja
Publication of JPH0519312B2 publication Critical patent/JPH0519312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59064675A 1984-03-31 1984-03-31 相補型ｍｏｓ集積回路の製造方法 Granted JPS60207368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59064675A JPS60207368A (ja) 1984-03-31 1984-03-31 相補型ｍｏｓ集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59064675A JPS60207368A (ja) 1984-03-31 1984-03-31 相補型ｍｏｓ集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS60207368A JPS60207368A (ja) 1985-10-18
JPH0519312B2 true JPH0519312B2 (fr) 1993-03-16

Family

ID=13264981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59064675A Granted JPS60207368A (ja) 1984-03-31 1984-03-31 相補型ｍｏｓ集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS60207368A (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503585A (fr) * 1973-04-12 1975-01-14
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52149481A (en) * 1976-06-08 1977-12-12 Toshiba Corp Semiconductor integrated circuit device and its production
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor
JPS54104290A (en) * 1978-02-02 1979-08-16 Nec Corp Complementary mos integrated circuit device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503585A (fr) * 1973-04-12 1975-01-14
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52149481A (en) * 1976-06-08 1977-12-12 Toshiba Corp Semiconductor integrated circuit device and its production
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS54104290A (en) * 1978-02-02 1979-08-16 Nec Corp Complementary mos integrated circuit device

Also Published As

Publication number Publication date
JPS60207368A (ja) 1985-10-18

Similar Documents

Publication Publication Date Title
JP3462301B2 (ja) 半導体装置及びその製造方法
US6861304B2 (en) Semiconductor integrated circuit device and method of manufacturing thereof
JPH1012887A (ja) トランジスタ素子及びその製造方法
US6137146A (en) Bipolar transistor and method of forming BiCMOS circuitry
JPH11243210A (ja) 半導体デバイス及びその製造方法
EP0158292B1 (fr) Dispositif semi-conducteur comportant un élément de circuit driver et un transistor de sortie
JPH09162417A (ja) シリコン・オン・インシュレータ基板上のｃｍｏｓ集積回路およびシリコン・オン・インシュレータ基板上に集積回路を形成する方法
KR890004797B1 (ko) 우물영역을 갖는 반도체기판상에 형성되는 mis형 반도체장치
JP2633873B2 (ja) 半導体ＢｉＣＭＯＳ装置の製造方法
JPS6360549B2 (fr)
JP3192857B2 (ja) 縦型ｍｏｓ半導体装置及びその製造方法
JP3526127B2 (ja) Ｍｏｓトランジスタの製造方法
JPH0519312B2 (fr)
JPS6025028B2 (ja) 半導体装置の製造方法
JP2605757B2 (ja) 半導体装置の製造方法
JP2000164727A (ja) 半導体装置の製造方法
JPS6020571A (ja) 半導体装置
JPH04115538A (ja) 半導体装置
JPS62293767A (ja) 半導体集積回路
JPH0786596A (ja) 半導体装置およびその製造方法
Zimmer MOS-technology
JPH11330268A (ja) 半導体集積回路装置およびその製造方法
JPH11251467A (ja) 半導体装置及びその製造方法
JP3347650B2 (ja) 半導体装置及びその製造方法
JPS63160277A (ja) 半導体素子製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees