JPS503585A - - Google Patents
Info
- Publication number
- JPS503585A JPS503585A JP49010574A JP1057474A JPS503585A JP S503585 A JPS503585 A JP S503585A JP 49010574 A JP49010574 A JP 49010574A JP 1057474 A JP1057474 A JP 1057474A JP S503585 A JPS503585 A JP S503585A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35058773A | 1973-04-12 | 1973-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS503585A true JPS503585A (fr) | 1975-01-14 |
Family
ID=23377367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49010574A Pending JPS503585A (fr) | 1973-04-12 | 1974-01-24 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS503585A (fr) |
| CA (1) | CA997869A (fr) |
| DE (1) | DE2415736A1 (fr) |
| FR (1) | FR2225844B1 (fr) |
| GB (1) | GB1443999A (fr) |
| IT (1) | IT1008753B (fr) |
| NL (1) | NL7317176A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558019A (en) * | 1978-06-30 | 1980-01-21 | Nec Corp | Semiconductor device |
| JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型ｍｏｓ集積回路の製造方法 |
| JPS60250664A (ja) * | 1984-05-26 | 1985-12-11 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4442529A (en) * | 1981-02-04 | 1984-04-10 | At&T Bell Telephone Laboratories, Incorporated | Power supply rejection characteristics of CMOS circuits |
| NL8301554A (nl) * | 1982-05-06 | 1983-12-01 | Mitsubishi Electric Corp | Geintegreerde schakeling-inrichting van het cmos-type. |
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPH0652792B2 (ja) * | 1985-02-26 | 1994-07-06 | 日産自動車株式会社 | 半導体装置 |
| JPS6386555A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | 半導体装置 |
-
1973
- 1973-11-28 CA CA186,913A patent/CA997869A/en not_active Expired
- 1973-12-14 NL NL7317176A patent/NL7317176A/xx not_active Application Discontinuation
- 1973-12-21 GB GB5939073A patent/GB1443999A/en not_active Expired
-
1974
- 1974-01-08 FR FR7400545A patent/FR2225844B1/fr not_active Expired
- 1974-01-24 JP JP49010574A patent/JPS503585A/ja active Pending
- 1974-01-25 IT IT4793174A patent/IT1008753B/it active
- 1974-04-01 DE DE19742415736 patent/DE2415736A1/de active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558019A (en) * | 1978-06-30 | 1980-01-21 | Nec Corp | Semiconductor device |
| JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型ｍｏｓ集積回路の製造方法 |
| JPH0519312B2 (fr) * | 1984-03-31 | 1993-03-16 | Shingijutsu Jigyodan | |
| JPS60250664A (ja) * | 1984-05-26 | 1985-12-11 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JPH0240220B2 (fr) * | 1984-05-26 | 1990-09-10 | Tokyo Shibaura Electric Co |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1443999A (en) | 1976-07-28 |
| CA997869A (en) | 1976-09-28 |
| DE2415736A1 (de) | 1974-10-24 |
| NL7317176A (fr) | 1974-10-15 |
| FR2225844B1 (fr) | 1977-06-10 |
| IT1008753B (it) | 1976-11-30 |
| FR2225844A1 (fr) | 1974-11-08 |