CA997869A - Floating body mosfet - Google Patents

Floating body mosfet

Info

Publication number
CA997869A
CA997869A CA186,913A CA186913A CA997869A CA 997869 A CA997869 A CA 997869A CA 186913 A CA186913 A CA 186913A CA 997869 A CA997869 A CA 997869A
Authority
CA
Canada
Prior art keywords
floating body
body mosfet
mosfet
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA186,913A
Other languages
English (en)
Inventor
Richard N. Wilenken
Leon B. Pearce
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Application granted granted Critical
Publication of CA997869A publication Critical patent/CA997869A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA186,913A 1973-04-12 1973-11-28 Floating body mosfet Expired CA997869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35058773A 1973-04-12 1973-04-12

Publications (1)

Publication Number Publication Date
CA997869A true CA997869A (en) 1976-09-28

Family

ID=23377367

Family Applications (1)

Application Number Title Priority Date Filing Date
CA186,913A Expired CA997869A (en) 1973-04-12 1973-11-28 Floating body mosfet

Country Status (7)

Country Link
JP (1) JPS503585A (fr)
CA (1) CA997869A (fr)
DE (1) DE2415736A1 (fr)
FR (1) FR2225844B1 (fr)
GB (1) GB1443999A (fr)
IT (1) IT1008753B (fr)
NL (1) NL7317176A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558019A (en) * 1978-06-30 1980-01-21 Nec Corp Semiconductor device
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS60207368A (ja) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan 相補型ｍｏｓ集積回路の製造方法
JPS60250664A (ja) * 1984-05-26 1985-12-11 Toshiba Corp 半導体集積回路装置およびその製造方法
JPH0652792B2 (ja) * 1985-02-26 1994-07-06 日産自動車株式会社 半導体装置
JPS6386555A (ja) * 1986-09-30 1988-04-16 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE2415736A1 (de) 1974-10-24
NL7317176A (fr) 1974-10-15
FR2225844A1 (fr) 1974-11-08
FR2225844B1 (fr) 1977-06-10
IT1008753B (it) 1976-11-30
JPS503585A (fr) 1975-01-14
GB1443999A (en) 1976-07-28

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