JPH0517702B2 - - Google Patents
Info
- Publication number
- JPH0517702B2 JPH0517702B2 JP61260994A JP26099486A JPH0517702B2 JP H0517702 B2 JPH0517702 B2 JP H0517702B2 JP 61260994 A JP61260994 A JP 61260994A JP 26099486 A JP26099486 A JP 26099486A JP H0517702 B2 JPH0517702 B2 JP H0517702B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- external connection
- base
- transistor
- connection portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61260994A JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
EP87309580A EP0266205B1 (en) | 1986-10-31 | 1987-10-29 | Semiconductor device constituting bipolar transistor |
DE87309580T DE3788500T2 (de) | 1986-10-31 | 1987-10-29 | Bipolarer Halbleitertransistor. |
KR1019870012062A KR900008150B1 (ko) | 1986-10-31 | 1987-10-30 | 쌍극성 트랜지스터를 구성하는 반도체장치 |
US07/412,552 US4994880A (en) | 1986-10-31 | 1989-09-25 | Semiconductor device constituting bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61260994A JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63114259A JPS63114259A (ja) | 1988-05-19 |
JPH0517702B2 true JPH0517702B2 (enrdf_load_stackoverflow) | 1993-03-09 |
Family
ID=17355587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61260994A Granted JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63114259A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4837330B2 (ja) * | 2005-08-04 | 2011-12-14 | 株式会社貝印刃物開発センター | まな板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5651366U (enrdf_load_stackoverflow) * | 1979-09-25 | 1981-05-07 | ||
JPS57181161A (en) * | 1981-04-30 | 1982-11-08 | Sanyo Electric Co Ltd | Transistor |
JPS589369A (ja) * | 1981-07-08 | 1983-01-19 | Matsushita Electronics Corp | トランジスタ |
JPS5827936U (ja) * | 1981-08-18 | 1983-02-23 | 日本電気株式会社 | 半導体装置 |
JPS59132662A (ja) * | 1983-01-19 | 1984-07-30 | Nec Corp | トランジスタ |
JPS6020905A (ja) * | 1983-07-13 | 1985-02-02 | Mitsubishi Rayon Co Ltd | 新規熱可塑性重合体 |
-
1986
- 1986-10-31 JP JP61260994A patent/JPS63114259A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63114259A (ja) | 1988-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108470732B (zh) | 半导体装置 | |
JP2008235856A (ja) | 半導体装置 | |
JPH03224263A (ja) | Cmos集積回路の静電放電保護構造 | |
US4994880A (en) | Semiconductor device constituting bipolar transistor | |
CN111477598B (zh) | 半导体装置 | |
CN111863743B (zh) | 半导体装置 | |
JPH03225960A (ja) | 半導体デバイス | |
CN110504255B (zh) | 反向导通型半导体装置 | |
JPH0517702B2 (enrdf_load_stackoverflow) | ||
US5744854A (en) | Surge protective device having a surface collector region directly shorted to a base region | |
WO2021234883A1 (ja) | 半導体装置 | |
JP4142539B2 (ja) | 電力用半導体装置 | |
JP3375560B2 (ja) | 半導体装置 | |
JP2020150250A (ja) | 半導体装置 | |
JP7079638B2 (ja) | 半導体素子 | |
JP2690776B2 (ja) | 半導体装置 | |
EP0395862A2 (en) | Semiconductor device comprising a lead member | |
JPH03184369A (ja) | 半導体装置 | |
JPS58186959A (ja) | 半導体装置 | |
JP2547759Y2 (ja) | Mes型化合物半導体装置 | |
JP2982435B2 (ja) | 抵抗器 | |
WO2025033354A1 (ja) | 半導体装置 | |
JPH06169057A (ja) | 半導体装置 | |
JPH0588542B2 (enrdf_load_stackoverflow) | ||
JPH05326568A (ja) | 化合物半導体集積回路 |