JPH0588542B2 - - Google Patents
Info
- Publication number
- JPH0588542B2 JPH0588542B2 JP61289424A JP28942486A JPH0588542B2 JP H0588542 B2 JPH0588542 B2 JP H0588542B2 JP 61289424 A JP61289424 A JP 61289424A JP 28942486 A JP28942486 A JP 28942486A JP H0588542 B2 JPH0588542 B2 JP H0588542B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- electrode
- base
- external connection
- finger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000009827 uniform distribution Methods 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 10
- 238000003199 nucleic acid amplification method Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000007373 indentation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61289424A JPS63142674A (ja) | 1986-12-04 | 1986-12-04 | バイポ−ラ型トランジスタ |
| DE87309580T DE3788500T2 (de) | 1986-10-31 | 1987-10-29 | Bipolarer Halbleitertransistor. |
| EP87309580A EP0266205B1 (en) | 1986-10-31 | 1987-10-29 | Semiconductor device constituting bipolar transistor |
| KR1019870012062A KR900008150B1 (ko) | 1986-10-31 | 1987-10-30 | 쌍극성 트랜지스터를 구성하는 반도체장치 |
| US07/412,552 US4994880A (en) | 1986-10-31 | 1989-09-25 | Semiconductor device constituting bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61289424A JPS63142674A (ja) | 1986-12-04 | 1986-12-04 | バイポ−ラ型トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63142674A JPS63142674A (ja) | 1988-06-15 |
| JPH0588542B2 true JPH0588542B2 (enrdf_load_stackoverflow) | 1993-12-22 |
Family
ID=17743062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61289424A Granted JPS63142674A (ja) | 1986-10-31 | 1986-12-04 | バイポ−ラ型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142674A (enrdf_load_stackoverflow) |
-
1986
- 1986-12-04 JP JP61289424A patent/JPS63142674A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63142674A (ja) | 1988-06-15 |
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