JPS63114259A - バイポ−ラ型トランジスタ - Google Patents
バイポ−ラ型トランジスタInfo
- Publication number
- JPS63114259A JPS63114259A JP61260994A JP26099486A JPS63114259A JP S63114259 A JPS63114259 A JP S63114259A JP 61260994 A JP61260994 A JP 61260994A JP 26099486 A JP26099486 A JP 26099486A JP S63114259 A JPS63114259 A JP S63114259A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- external connection
- base
- electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61260994A JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
DE87309580T DE3788500T2 (de) | 1986-10-31 | 1987-10-29 | Bipolarer Halbleitertransistor. |
EP87309580A EP0266205B1 (en) | 1986-10-31 | 1987-10-29 | Semiconductor device constituting bipolar transistor |
KR1019870012062A KR900008150B1 (ko) | 1986-10-31 | 1987-10-30 | 쌍극성 트랜지스터를 구성하는 반도체장치 |
US07/412,552 US4994880A (en) | 1986-10-31 | 1989-09-25 | Semiconductor device constituting bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61260994A JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63114259A true JPS63114259A (ja) | 1988-05-19 |
JPH0517702B2 JPH0517702B2 (enrdf_load_stackoverflow) | 1993-03-09 |
Family
ID=17355587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61260994A Granted JPS63114259A (ja) | 1986-10-31 | 1986-10-31 | バイポ−ラ型トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63114259A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007037846A (ja) * | 2005-08-04 | 2007-02-15 | Kai R & D Center Co Ltd | まな板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5651366U (enrdf_load_stackoverflow) * | 1979-09-25 | 1981-05-07 | ||
JPS57181161A (en) * | 1981-04-30 | 1982-11-08 | Sanyo Electric Co Ltd | Transistor |
JPS589369A (ja) * | 1981-07-08 | 1983-01-19 | Matsushita Electronics Corp | トランジスタ |
JPS5827936U (ja) * | 1981-08-18 | 1983-02-23 | 日本電気株式会社 | 半導体装置 |
JPS59132662A (ja) * | 1983-01-19 | 1984-07-30 | Nec Corp | トランジスタ |
JPS6020905A (ja) * | 1983-07-13 | 1985-02-02 | Mitsubishi Rayon Co Ltd | 新規熱可塑性重合体 |
-
1986
- 1986-10-31 JP JP61260994A patent/JPS63114259A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5651366U (enrdf_load_stackoverflow) * | 1979-09-25 | 1981-05-07 | ||
JPS57181161A (en) * | 1981-04-30 | 1982-11-08 | Sanyo Electric Co Ltd | Transistor |
JPS589369A (ja) * | 1981-07-08 | 1983-01-19 | Matsushita Electronics Corp | トランジスタ |
JPS5827936U (ja) * | 1981-08-18 | 1983-02-23 | 日本電気株式会社 | 半導体装置 |
JPS59132662A (ja) * | 1983-01-19 | 1984-07-30 | Nec Corp | トランジスタ |
JPS6020905A (ja) * | 1983-07-13 | 1985-02-02 | Mitsubishi Rayon Co Ltd | 新規熱可塑性重合体 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007037846A (ja) * | 2005-08-04 | 2007-02-15 | Kai R & D Center Co Ltd | まな板 |
Also Published As
Publication number | Publication date |
---|---|
JPH0517702B2 (enrdf_load_stackoverflow) | 1993-03-09 |
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