JPH0516174B2 - - Google Patents

Info

Publication number
JPH0516174B2
JPH0516174B2 JP56038491A JP3849181A JPH0516174B2 JP H0516174 B2 JPH0516174 B2 JP H0516174B2 JP 56038491 A JP56038491 A JP 56038491A JP 3849181 A JP3849181 A JP 3849181A JP H0516174 B2 JPH0516174 B2 JP H0516174B2
Authority
JP
Japan
Prior art keywords
silicon
nitride film
silicon nitride
film
excess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56038491A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57153429A (en
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3849181A priority Critical patent/JPS57153429A/ja
Publication of JPS57153429A publication Critical patent/JPS57153429A/ja
Publication of JPH0516174B2 publication Critical patent/JPH0516174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP3849181A 1981-03-17 1981-03-17 Manufacture of semiconductor device Granted JPS57153429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3849181A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3849181A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153429A JPS57153429A (en) 1982-09-22
JPH0516174B2 true JPH0516174B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=12526727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3849181A Granted JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153429A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
KR970003893B1 (ko) * 1993-10-25 1997-03-22 삼성전자 주식회사 반도체 장치의 소자 분리 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536935A (en) * 1978-09-06 1980-03-14 Hitachi Ltd Manufacturing of semiconductor device
JPS55162234A (en) * 1979-06-05 1980-12-17 Agency Of Ind Science & Technol Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS57153429A (en) 1982-09-22

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