JPH049395B2 - - Google Patents
Info
- Publication number
- JPH049395B2 JPH049395B2 JP22214085A JP22214085A JPH049395B2 JP H049395 B2 JPH049395 B2 JP H049395B2 JP 22214085 A JP22214085 A JP 22214085A JP 22214085 A JP22214085 A JP 22214085A JP H049395 B2 JPH049395 B2 JP H049395B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thermal resistance
- type
- thickness
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60222140A JPS6281783A (ja) | 1985-10-04 | 1985-10-04 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60222140A JPS6281783A (ja) | 1985-10-04 | 1985-10-04 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6281783A JPS6281783A (ja) | 1987-04-15 |
| JPH049395B2 true JPH049395B2 (OSRAM) | 1992-02-20 |
Family
ID=16777799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60222140A Granted JPS6281783A (ja) | 1985-10-04 | 1985-10-04 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6281783A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63236385A (ja) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | 半導体発光素子 |
-
1985
- 1985-10-04 JP JP60222140A patent/JPS6281783A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6281783A (ja) | 1987-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04229689A (ja) | 発光半導体ダイオード及びその製造方法 | |
| JPH10173292A (ja) | 窒化ガリウム系半導体レーザ | |
| US5832019A (en) | Index guided semiconductor laser biode with shallow selective IILD | |
| JPH0732285B2 (ja) | 半導体レ−ザ装置 | |
| US5586136A (en) | Semiconductor laser device with a misoriented substrate | |
| JP2778454B2 (ja) | 半導体レーザ | |
| JPH0654821B2 (ja) | 半導体発光素子 | |
| JPH05160504A (ja) | 半導体レーザ装置 | |
| JPH1022586A (ja) | 半導体発光素子 | |
| JPH0697592A (ja) | 半導体レーザ及びその製造方法 | |
| JPH05267797A (ja) | 発光半導体ダイオード | |
| JPH0558275B2 (OSRAM) | ||
| JP3209786B2 (ja) | 半導体発光素子 | |
| JP2508625B2 (ja) | 半導体レ−ザ− | |
| JPH02116187A (ja) | 半導体レーザ | |
| JPH09129969A (ja) | 半導体レーザ | |
| JP3246400B2 (ja) | 低抵抗窒化ガリウム系発光素子およびその製造方法 | |
| JP3033333B2 (ja) | 半導体レーザ素子 | |
| JP2687694B2 (ja) | 半導体レーザ | |
| JP2001251015A (ja) | 半導体レーザ素子及びその製造方法 | |
| JPS6281783A (ja) | 半導体発光素子 | |
| JP3193087B2 (ja) | ＡｌＧａＩｎＰ半導体発光装置 | |
| JPH07202346A (ja) | 半導体装置の製造方法および半導体装置 | |
| JPH0923040A (ja) | 半導体発光素子 | |
| JP2697589B2 (ja) | 超格子構造体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |