JPS6281783A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPS6281783A
JPS6281783A JP60222140A JP22214085A JPS6281783A JP S6281783 A JPS6281783 A JP S6281783A JP 60222140 A JP60222140 A JP 60222140A JP 22214085 A JP22214085 A JP 22214085A JP S6281783 A JPS6281783 A JP S6281783A
Authority
JP
Japan
Prior art keywords
layer
type
undoped
active layer
thermal resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60222140A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049395B2 (OSRAM
Inventor
Isao Hino
日野 功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60222140A priority Critical patent/JPS6281783A/ja
Publication of JPS6281783A publication Critical patent/JPS6281783A/ja
Publication of JPH049395B2 publication Critical patent/JPH049395B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP60222140A 1985-10-04 1985-10-04 半導体発光素子 Granted JPS6281783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60222140A JPS6281783A (ja) 1985-10-04 1985-10-04 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60222140A JPS6281783A (ja) 1985-10-04 1985-10-04 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS6281783A true JPS6281783A (ja) 1987-04-15
JPH049395B2 JPH049395B2 (OSRAM) 1992-02-20

Family

ID=16777799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60222140A Granted JPS6281783A (ja) 1985-10-04 1985-10-04 半導体発光素子

Country Status (1)

Country Link
JP (1) JPS6281783A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236385A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd 半導体発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236385A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd 半導体発光素子

Also Published As

Publication number Publication date
JPH049395B2 (OSRAM) 1992-02-20

Similar Documents

Publication Publication Date Title
JPS63236387A (ja) 光半導体装置
Saint-Cricq et al. Well width dependence of gain and threshold current in GaAlAs single quantum well lasers
JPS61218192A (ja) 半導体発光素子
JPS59208889A (ja) 半導体レ−ザ
JPH01175285A (ja) 半導体レーザ装置
JPH04266075A (ja) 半導体装置
JPH03236276A (ja) 光機能素子
JPS61280694A (ja) 半導体発光素子
US5057881A (en) Light emitting compositional semiconductor device
JPH0371679A (ja) 半導体発光素子
JPS60145687A (ja) 半導体レ−ザ−
JPS62216386A (ja) 半導体発光素子
JP2508625B2 (ja) 半導体レ−ザ−
JPH049395B2 (OSRAM)
JPH0334488A (ja) 半導体レーザ素子
JP3193087B2 (ja) AlGaInP半導体発光装置
JP3144821B2 (ja) 半導体レーザ装置
JPS63136591A (ja) 半導体レ−ザ
JP2848615B2 (ja) 半導体発光素子
JPH1079554A (ja) 光半導体装置
JPS59188185A (ja) 光半導体素子
JPS62144387A (ja) 半導体発光装置
Loural et al. Refractive index step and optical confinement in Ga0. 86In0. 14As0. 13Sb0. 87/Ga0. 73Al0. 87As0. 02Sb0. 98 double heterostructure lasers emitting at 2.2 μm
JPS63147390A (ja) 半導体レ−ザ素子
JPS62166587A (ja) 半導体レ−ザ装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees