JPH0482065B2 - - Google Patents

Info

Publication number
JPH0482065B2
JPH0482065B2 JP60121004A JP12100485A JPH0482065B2 JP H0482065 B2 JPH0482065 B2 JP H0482065B2 JP 60121004 A JP60121004 A JP 60121004A JP 12100485 A JP12100485 A JP 12100485A JP H0482065 B2 JPH0482065 B2 JP H0482065B2
Authority
JP
Japan
Prior art keywords
electrode
region
gate electrode
source
fixed potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60121004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61279176A (ja
Inventor
Toshiaki Goto
Susumu Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60121004A priority Critical patent/JPS61279176A/ja
Publication of JPS61279176A publication Critical patent/JPS61279176A/ja
Publication of JPH0482065B2 publication Critical patent/JPH0482065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
JP60121004A 1985-06-04 1985-06-04 Ｍｏｓ電界効果トランジスタ Granted JPS61279176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60121004A JPS61279176A (ja) 1985-06-04 1985-06-04 Ｍｏｓ電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60121004A JPS61279176A (ja) 1985-06-04 1985-06-04 Ｍｏｓ電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS61279176A JPS61279176A (ja) 1986-12-09
JPH0482065B2 true JPH0482065B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=14800399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60121004A Granted JPS61279176A (ja) 1985-06-04 1985-06-04 Ｍｏｓ電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS61279176A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61279176A (ja) 1986-12-09

Similar Documents

Publication Publication Date Title
JPH0777262B2 (ja) 縦型電界効果トランジスタ
JPS63252480A (ja) 縦形モス電界効果トランジスタ
JPH0482065B2 (enrdf_load_stackoverflow)
JP2941816B2 (ja) Ｍｏｓ型トランジスタ
JPH0349266A (ja) Ｍｏｓ型半導体装置
JPH0222868A (ja) 絶縁ゲート電界効果トランジスタ
JPH0196966A (ja) 電界効果トランジスタ
JP2598446B2 (ja) Ｍｉｓ−ｆｅｔ
JP2599494B2 (ja) 半導体装置
JPS6255303B2 (enrdf_load_stackoverflow)
JPH067597B2 (ja) 縦型ｍｏｓｆｅｔ
JPS59119045U (ja) 高出力高周波トランジスタ
JP3364541B2 (ja) 絶縁ゲ−ト型電界効果トランジスタ
JPS5858747A (ja) Ｍｏｓ型半導体集積回路
JP3130645B2 (ja) 高耐圧ｍｏｓトランジスタ
JPS61170068A (ja) Ｍｏｓトランジスタ
JPS6355976A (ja) 電界効果半導体装置
JPH0364931A (ja) Ｍｏｓ型半導体装置
RU94037403A (ru) Полевой транзистор типа металл-диэлектрик-полупроводник
JPH088356B2 (ja) 縦型電界効果トランジスタ
JP2532471B2 (ja) 半導体装置
JPH05275703A (ja) 半導体装置およびその製造方法
JPH0566030B2 (enrdf_load_stackoverflow)
JPH025484A (ja) Ｍｏｓ型半導体素子
JPS60154662A (ja) Ｍｏｓ型半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term