JPS61279176A - Mos電界効果トランジスタ - Google Patents

Mos電界効果トランジスタ

Info

Publication number
JPS61279176A
JPS61279176A JP60121004A JP12100485A JPS61279176A JP S61279176 A JPS61279176 A JP S61279176A JP 60121004 A JP60121004 A JP 60121004A JP 12100485 A JP12100485 A JP 12100485A JP S61279176 A JPS61279176 A JP S61279176A
Authority
JP
Japan
Prior art keywords
electrode
gate electrode
effect transistor
field effect
mos field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60121004A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0482065B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Goto
利昭 後藤
Susumu Nagai
進 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60121004A priority Critical patent/JPS61279176A/ja
Publication of JPS61279176A publication Critical patent/JPS61279176A/ja
Publication of JPH0482065B2 publication Critical patent/JPH0482065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
JP60121004A 1985-06-04 1985-06-04 Mos電界効果トランジスタ Granted JPS61279176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60121004A JPS61279176A (ja) 1985-06-04 1985-06-04 Mos電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60121004A JPS61279176A (ja) 1985-06-04 1985-06-04 Mos電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS61279176A true JPS61279176A (ja) 1986-12-09
JPH0482065B2 JPH0482065B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=14800399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60121004A Granted JPS61279176A (ja) 1985-06-04 1985-06-04 Mos電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS61279176A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0482065B2 (enrdf_load_stackoverflow) 1992-12-25

Similar Documents

Publication Publication Date Title
KR890004444A (ko) Mos트랜지스터
JPH04107867A (ja) 半導体装置
JPS63252480A (ja) 縦形モス電界効果トランジスタ
JPS6387773A (ja) シヨツトキバリア型電界効果トランジスタ
JPS61279176A (ja) Mos電界効果トランジスタ
JPH04241463A (ja) 半導体装置
JPS6066444A (ja) 半導体装置
JPH01111378A (ja) 縦型mos fet
JPS6340376A (ja) 電界効果型半導体装置
JPS58192359A (ja) 半導体装置
JPS59119045U (ja) 高出力高周波トランジスタ
JPS6355976A (ja) 電界効果半導体装置
JPS63177566A (ja) 電界効果トランジスタ
JPS61170068A (ja) Mosトランジスタ
JPS60154662A (ja) Mos型半導体装置
JPS60107866A (ja) 半導体装置
JP2973450B2 (ja) 半導体装置
JPS59228764A (ja) 半導体装置
JP2532471B2 (ja) 半導体装置
JP2642000B2 (ja) Mos集積回路装置
JPS6255303B2 (enrdf_load_stackoverflow)
JPS58180646U (ja) 電界効果トランジスタ
JPS5858747A (ja) Mos型半導体集積回路
JPH088356B2 (ja) 縦型電界効果トランジスタ
JPH0493081A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term