JPH0478592B2 - - Google Patents
Info
- Publication number
- JPH0478592B2 JPH0478592B2 JP63162726A JP16272688A JPH0478592B2 JP H0478592 B2 JPH0478592 B2 JP H0478592B2 JP 63162726 A JP63162726 A JP 63162726A JP 16272688 A JP16272688 A JP 16272688A JP H0478592 B2 JPH0478592 B2 JP H0478592B2
- Authority
- JP
- Japan
- Prior art keywords
- hot cathode
- reaction chamber
- reactant gas
- heating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000010432 diamond Substances 0.000 claims description 23
- 239000000376 reactant Substances 0.000 claims description 22
- 229910003460 diamond Inorganic materials 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000010494 dissociation reaction Methods 0.000 claims description 11
- 230000005593 dissociations Effects 0.000 claims description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 heat sinks Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/068,863 US4830702A (en) | 1987-07-02 | 1987-07-02 | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6465093A JPS6465093A (en) | 1989-03-10 |
| JPH0478592B2 true JPH0478592B2 (en, 2012) | 1992-12-11 |
Family
ID=22085192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63162726A Granted JPS6465093A (en) | 1987-07-02 | 1988-07-01 | Diamond synthetic apparatus and process with hollow cathode type plazma |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4830702A (en, 2012) |
| EP (1) | EP0297845A3 (en, 2012) |
| JP (1) | JPS6465093A (en, 2012) |
| KR (1) | KR960006263B1 (en, 2012) |
| AU (1) | AU598141B2 (en, 2012) |
| BR (1) | BR8803237A (en, 2012) |
| IL (1) | IL86834A (en, 2012) |
| IN (1) | IN169039B (en, 2012) |
| ZA (1) | ZA884657B (en, 2012) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA877921B (en) * | 1986-12-22 | 1988-04-21 | General Electric Company | Condensate diamond |
| GB8810113D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Bonded composite |
| US5261959A (en) * | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
| JPH0288497A (ja) * | 1988-06-09 | 1990-03-28 | Toshiba Corp | 単結晶ダイヤモンド粒子の製造方法 |
| JPH0794360B2 (ja) * | 1989-01-24 | 1995-10-11 | 住友電気工業株式会社 | ダイヤモンドの気相合成法 |
| US4981717A (en) * | 1989-02-24 | 1991-01-01 | Mcdonnell Douglas Corporation | Diamond like coating and method of forming |
| JPH02248397A (ja) * | 1989-03-20 | 1990-10-04 | Onoda Cement Co Ltd | ダイヤモンドの製造装置および製造方法 |
| US5106452A (en) * | 1989-06-05 | 1992-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of depositing diamond and diamond light emitting device |
| JP2837700B2 (ja) * | 1989-08-23 | 1998-12-16 | ティーディーケイ株式会社 | ダイヤモンド様薄膜を形成する方法 |
| US5110579A (en) * | 1989-09-14 | 1992-05-05 | General Electric Company | Transparent diamond films and method for making |
| US5273731A (en) * | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
| US5061513A (en) * | 1990-03-30 | 1991-10-29 | Flynn Paul L | Process for depositing hard coating in a nozzle orifice |
| US5075094A (en) * | 1990-04-30 | 1991-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Method of growing diamond film on substrates |
| US5071670A (en) * | 1990-06-11 | 1991-12-10 | Kelly Michael A | Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means |
| EP0470531B1 (en) * | 1990-08-07 | 1994-04-20 | Sumitomo Electric Industries, Ltd. | Diamond synthesizing method |
| ATE134223T1 (de) * | 1990-12-24 | 1996-02-15 | Gen Electric | Verkleidung aus metall zur steigerung der wachstumsgeschwindigkeit beim aufdampfen von diamant mittels cvd |
| US5314540A (en) * | 1991-03-22 | 1994-05-24 | Nippondenso Co., Ltd. | Apparatus for forming diamond film |
| EP0531527B1 (en) * | 1991-03-27 | 1998-01-14 | Institut Elektrosvarki Imeni E.O.Patona Akademii Nauk Ukrainskoi Ssr | Method and device for plasma-detonation working of metal articles |
| USH1249H (en) | 1991-07-01 | 1993-11-02 | Machonkin Mary A | Coating processes with a polycrystalline diamond passivation layer |
| CA2077773A1 (en) * | 1991-10-25 | 1993-04-26 | Thomas R. Anthony | Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond |
| CA2082711A1 (en) * | 1991-12-13 | 1993-06-14 | Philip G. Kosky | Cvd diamond growth on hydride-forming metal substrates |
| US5397428A (en) * | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
| US5286534A (en) * | 1991-12-23 | 1994-02-15 | Minnesota Mining And Manufacturing Company | Process for plasma deposition of a carbon rich coating |
| EP0549186A1 (en) * | 1991-12-26 | 1993-06-30 | General Electric Company | Diamond films |
| CA2087771A1 (en) * | 1992-02-28 | 1993-08-29 | Sanjay M. Correa | Preheater for cvd diamond reactor |
| US5175929A (en) * | 1992-03-04 | 1993-01-05 | General Electric Company | Method for producing articles by chemical vapor deposition |
| DE4228064A1 (de) * | 1992-08-24 | 1994-03-03 | Plasma Technik Ag | Plasmaspritzgerät |
| JP3194820B2 (ja) * | 1992-09-03 | 2001-08-06 | 株式会社神戸製鋼所 | 配向性ダイヤモンド膜の形成方法 |
| US5837081A (en) * | 1993-04-07 | 1998-11-17 | Applied Sciences, Inc. | Method for making a carbon-carbon composite |
| US5389400A (en) * | 1993-04-07 | 1995-02-14 | Applied Sciences, Inc. | Method for making a diamond/carbon/carbon composite useful as an integral dielectric heat sink |
| US5560779A (en) * | 1993-07-12 | 1996-10-01 | Olin Corporation | Apparatus for synthesizing diamond films utilizing an arc plasma |
| AU7377094A (en) * | 1993-08-25 | 1995-03-21 | Physikalisches Buro Steinmuller Gmbh | Device for depositing diamond-like carbon films on a substrate |
| JP3176493B2 (ja) * | 1993-09-17 | 2001-06-18 | 株式会社神戸製鋼所 | 高配向性ダイヤモンド薄膜の形成方法 |
| US5620754A (en) * | 1994-01-21 | 1997-04-15 | Qqc, Inc. | Method of treating and coating substrates |
| US5731046A (en) * | 1994-01-18 | 1998-03-24 | Qqc, Inc. | Fabrication of diamond and diamond-like carbon coatings |
| US5554415A (en) * | 1994-01-18 | 1996-09-10 | Qqc, Inc. | Substrate coating techniques, including fabricating materials on a surface of a substrate |
| GB9405029D0 (en) * | 1994-03-15 | 1994-04-27 | Franks Joseph Dr | Improved catheters and other tubular inserts |
| US6187072B1 (en) | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
| JP2737720B2 (ja) * | 1995-10-12 | 1998-04-08 | 日本電気株式会社 | 薄膜形成方法及び装置 |
| DE19631407B4 (de) * | 1996-08-05 | 2006-05-04 | Unaxis Deutschland Holding Gmbh | Vorrichtung zur plasmachemischen Abscheidung von polykristallinem Diamant |
| JP3132489B2 (ja) * | 1998-11-05 | 2001-02-05 | 日本電気株式会社 | 化学的気相成長装置及び薄膜成膜方法 |
| KR100360281B1 (ko) * | 2000-10-19 | 2002-11-09 | 신승도 | 다이아몬드 기상 합성 장치 및 이를 이용한 합성 방법 |
| US20040122515A1 (en) * | 2002-11-21 | 2004-06-24 | Xi Chu | Prosthetic valves and methods of manufacturing |
| AT412653B (de) * | 2003-06-26 | 2005-05-25 | Physikalisches Buero Steinmuel | Verfahren zur anbringung eines identifizierungsmerkmals |
| AT500171B8 (de) * | 2003-09-10 | 2007-02-15 | Physikalisches Buero Steinmuel | Verfahren zur herstellung eines diamantbeschichteten bauteils |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| CA2653581A1 (en) | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
| US8143147B1 (en) | 2011-02-10 | 2012-03-27 | Intermolecular, Inc. | Methods and systems for forming thin films |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US430462A (en) * | 1890-06-17 | Electric incrustation-preventer | ||
| US3030187A (en) * | 1958-07-23 | 1962-04-17 | Union Carbide Corp | Synthesis of diamond |
| US3961103A (en) * | 1972-07-12 | 1976-06-01 | Space Sciences, Inc. | Film deposition |
| DD143070A1 (de) * | 1979-04-23 | 1980-07-30 | Klaus Bewilogua | Verfahren zur erzeugung von diamantkristalliten |
| US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
| US4440108A (en) * | 1982-09-24 | 1984-04-03 | Spire Corporation | Ion beam coating apparatus |
| US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
| SE442305B (sv) * | 1984-06-27 | 1985-12-16 | Santrade Ltd | Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen |
| US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
| JPS61194180A (ja) * | 1985-01-18 | 1986-08-28 | Nachi Fujikoshi Corp | 中空放電蒸着装置 |
| CH668145A5 (fr) * | 1986-09-26 | 1988-11-30 | Inst Microtechnique De L Unive | Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma. |
-
1987
- 1987-07-02 US US07/068,863 patent/US4830702A/en not_active Expired - Fee Related
-
1988
- 1988-06-22 IN IN507/CAL/88A patent/IN169039B/en unknown
- 1988-06-22 IL IL86834A patent/IL86834A/xx unknown
- 1988-06-29 ZA ZA884657A patent/ZA884657B/xx unknown
- 1988-06-29 EP EP88305899A patent/EP0297845A3/en not_active Withdrawn
- 1988-06-30 BR BR8803237A patent/BR8803237A/pt unknown
- 1988-07-01 JP JP63162726A patent/JPS6465093A/ja active Granted
- 1988-07-02 KR KR1019880008214A patent/KR960006263B1/ko not_active Expired - Lifetime
- 1988-07-04 AU AU18665/88A patent/AU598141B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| ZA884657B (en) | 1989-03-29 |
| EP0297845A3 (en) | 1989-10-18 |
| KR960006263B1 (ko) | 1996-05-13 |
| BR8803237A (pt) | 1989-01-31 |
| IL86834A0 (en) | 1988-11-30 |
| AU598141B2 (en) | 1990-06-14 |
| JPS6465093A (en) | 1989-03-10 |
| AU1866588A (en) | 1989-01-05 |
| IL86834A (en) | 1992-06-21 |
| US4830702A (en) | 1989-05-16 |
| KR890001892A (ko) | 1989-04-06 |
| EP0297845A2 (en) | 1989-01-04 |
| IN169039B (en, 2012) | 1991-08-24 |
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