AU7377094A - Device for depositing diamond-like carbon films on a substrate - Google Patents
Device for depositing diamond-like carbon films on a substrateInfo
- Publication number
- AU7377094A AU7377094A AU73770/94A AU7377094A AU7377094A AU 7377094 A AU7377094 A AU 7377094A AU 73770/94 A AU73770/94 A AU 73770/94A AU 7377094 A AU7377094 A AU 7377094A AU 7377094 A AU7377094 A AU 7377094A
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- carbon films
- depositing diamond
- diamond
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/121—Coherent waves, e.g. laser beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/126—Microwaves
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT170793A AT399726B (en) | 1993-08-25 | 1993-08-25 | Device for applying diamond-like carbon layers to a substrate |
AT1707/93 | 1993-08-25 | ||
DE9313168U DE9313168U1 (en) | 1993-09-01 | 1993-09-01 | Device for the thermal dissociation of a gas |
DE9313168 | 1993-09-01 | ||
PCT/AT1994/000116 WO1995006143A1 (en) | 1993-08-25 | 1994-08-18 | Device for depositing diamond-like carbon films on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
AU7377094A true AU7377094A (en) | 1995-03-21 |
Family
ID=25596611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU73770/94A Abandoned AU7377094A (en) | 1993-08-25 | 1994-08-18 | Device for depositing diamond-like carbon films on a substrate |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0714455A1 (en) |
AU (1) | AU7377094A (en) |
WO (1) | WO1995006143A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110070370A1 (en) * | 2008-05-28 | 2011-03-24 | Aixtron Ag | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
DE102011107894A1 (en) * | 2011-07-18 | 2013-01-24 | Creaphys Gmbh | Coating device, in particular for the inner coating of hollow bodies, and coating method |
AT519217B1 (en) * | 2016-10-04 | 2018-08-15 | Carboncompetence Gmbh | Apparatus and method for applying a carbon layer |
AT525593A1 (en) * | 2021-10-22 | 2023-05-15 | Carboncompetence Gmbh | Device and method for producing doped diamond layers |
CN114150289A (en) * | 2021-12-07 | 2022-03-08 | 江西晶耀科技有限公司 | Tantalum metal plate hot wire CVD method for efficiently decomposing gas |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4237151A (en) * | 1979-06-26 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Thermal decomposition of silane to form hydrogenated amorphous Si film |
JPS61163195A (en) * | 1985-01-09 | 1986-07-23 | Showa Denko Kk | Synthesizing method for diamond in gas phase and its apparatus |
US4830702A (en) * | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
JPH0780718B2 (en) * | 1989-08-04 | 1995-08-30 | トヨタ自動車株式会社 | Diamond synthesizing method and synthesizing apparatus |
DE3927133A1 (en) * | 1989-08-17 | 1991-02-21 | Philips Patentverwaltung | METHOD FOR DEPOSITING MICROCRYSTALLINE SOLID PARTICLES FROM THE GAS PHASE BY MEANS OF CHEMICAL VAPOR DEPOSITION |
DE3935865C1 (en) * | 1989-10-27 | 1990-10-04 | Philips Patentverwaltung Gmbh, 2000 Hamburg, De |
-
1994
- 1994-08-18 EP EP94923584A patent/EP0714455A1/en not_active Withdrawn
- 1994-08-18 WO PCT/AT1994/000116 patent/WO1995006143A1/en not_active Application Discontinuation
- 1994-08-18 AU AU73770/94A patent/AU7377094A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP0714455A1 (en) | 1996-06-05 |
WO1995006143A1 (en) | 1995-03-02 |
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