JPH0478188B2 - - Google Patents

Info

Publication number
JPH0478188B2
JPH0478188B2 JP60229312A JP22931285A JPH0478188B2 JP H0478188 B2 JPH0478188 B2 JP H0478188B2 JP 60229312 A JP60229312 A JP 60229312A JP 22931285 A JP22931285 A JP 22931285A JP H0478188 B2 JPH0478188 B2 JP H0478188B2
Authority
JP
Japan
Prior art keywords
gate electrode
layers
metal
silicide
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60229312A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6286865A (ja
Inventor
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22931285A priority Critical patent/JPS6286865A/ja
Publication of JPS6286865A publication Critical patent/JPS6286865A/ja
Publication of JPH0478188B2 publication Critical patent/JPH0478188B2/ja
Granted legal-status Critical Current

Links

JP22931285A 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ Granted JPS6286865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22931285A JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22931285A JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6286865A JPS6286865A (ja) 1987-04-21
JPH0478188B2 true JPH0478188B2 (https=) 1992-12-10

Family

ID=16890165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22931285A Granted JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6286865A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006140B1 (ko) * 1988-01-21 1993-07-07 세이꼬 엡슨 가부시끼가이샤 Mis형 반도체 집적회로장치
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
US5441914A (en) * 1994-05-02 1995-08-15 Motorola Inc. Method of forming conductive interconnect structure
JPH10270380A (ja) * 1997-03-21 1998-10-09 Nec Corp 半導体装置
JP3059150B1 (ja) 1999-02-02 2000-07-04 沖電気工業株式会社 ゲ―ト電極構造及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150281A (en) * 1975-06-19 1976-12-23 Oki Electric Ind Co Ltd Semiconductor device
JPS55143051A (en) * 1979-04-26 1980-11-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS56118370A (en) * 1980-02-21 1981-09-17 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS6286865A (ja) 1987-04-21

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