JPS6286865A - Ｍｏｓ型トランジスタ - Google Patents

Ｍｏｓ型トランジスタ

Info

Publication number
JPS6286865A
JPS6286865A JP22931285A JP22931285A JPS6286865A JP S6286865 A JPS6286865 A JP S6286865A JP 22931285 A JP22931285 A JP 22931285A JP 22931285 A JP22931285 A JP 22931285A JP S6286865 A JPS6286865 A JP S6286865A
Authority
JP
Japan
Prior art keywords
gate electrode
resistance
polysilicon
melting point
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22931285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478188B2 (https=
Inventor
Koichi Nagasawa
長沢　紘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22931285A priority Critical patent/JPS6286865A/ja
Publication of JPS6286865A publication Critical patent/JPS6286865A/ja
Publication of JPH0478188B2 publication Critical patent/JPH0478188B2/ja
Granted legal-status Critical Current

Links

JP22931285A 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ Granted JPS6286865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22931285A JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22931285A JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6286865A true JPS6286865A (ja) 1987-04-21
JPH0478188B2 JPH0478188B2 (https=) 1992-12-10

Family

ID=16890165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22931285A Granted JPS6286865A (ja) 1985-10-14 1985-10-14 Ｍｏｓ型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6286865A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
US5872385A (en) * 1994-05-02 1999-02-16 Motorola Inc. Conductive interconnect structure and method of formation
US5945719A (en) * 1997-03-21 1999-08-31 Nec Corporation Semiconductor device having metal silicide layer
US7022594B2 (en) 1999-02-02 2006-04-04 Oki Electric Industry Co., Ltd. Manufacturing method which prevents abnormal gate oxidation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150281A (en) * 1975-06-19 1976-12-23 Oki Electric Ind Co Ltd Semiconductor device
JPS55143051A (en) * 1979-04-26 1980-11-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS56118370A (en) * 1980-02-21 1981-09-17 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150281A (en) * 1975-06-19 1976-12-23 Oki Electric Ind Co Ltd Semiconductor device
JPS55143051A (en) * 1979-04-26 1980-11-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS56118370A (en) * 1980-02-21 1981-09-17 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
US5872385A (en) * 1994-05-02 1999-02-16 Motorola Inc. Conductive interconnect structure and method of formation
US5945719A (en) * 1997-03-21 1999-08-31 Nec Corporation Semiconductor device having metal silicide layer
US7022594B2 (en) 1999-02-02 2006-04-04 Oki Electric Industry Co., Ltd. Manufacturing method which prevents abnormal gate oxidation
US7375015B2 (en) 1999-02-02 2008-05-20 Oki Electric Industry Co., Ltd. Manufacturing method which prevents abnormal gate oxidation

Also Published As

Publication number Publication date
JPH0478188B2 (https=) 1992-12-10

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