JPH0476212B2 - - Google Patents

Info

Publication number
JPH0476212B2
JPH0476212B2 JP58209260A JP20926083A JPH0476212B2 JP H0476212 B2 JPH0476212 B2 JP H0476212B2 JP 58209260 A JP58209260 A JP 58209260A JP 20926083 A JP20926083 A JP 20926083A JP H0476212 B2 JPH0476212 B2 JP H0476212B2
Authority
JP
Japan
Prior art keywords
case
transistor module
metal coating
power transistor
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58209260A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5999753A (ja
Inventor
Roikeru Berunto
Bunku Kurausu
Hetsutoman Fuuberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
Asea Brown Boveri AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AB filed Critical Asea Brown Boveri AB
Publication of JPS5999753A publication Critical patent/JPS5999753A/ja
Publication of JPH0476212B2 publication Critical patent/JPH0476212B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W76/47—
    • H10W76/15—
    • H10W90/00—
    • H10W72/5449—
    • H10W72/5524—
    • H10W72/884—
    • H10W74/00—

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
JP58209260A 1982-11-10 1983-11-09 電力用トランジスタモジユ−ル Granted JPS5999753A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19823241508 DE3241508A1 (de) 1982-11-10 1982-11-10 Leistungstransistor-modul
DE3241508.7 1982-11-10

Publications (2)

Publication Number Publication Date
JPS5999753A JPS5999753A (ja) 1984-06-08
JPH0476212B2 true JPH0476212B2 (enExample) 1992-12-03

Family

ID=6177732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58209260A Granted JPS5999753A (ja) 1982-11-10 1983-11-09 電力用トランジスタモジユ−ル

Country Status (3)

Country Link
JP (1) JPS5999753A (enExample)
DE (1) DE3241508A1 (enExample)
FR (1) FR2535898A3 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726940A1 (fr) * 1994-05-31 1996-05-15 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
DE3505086A1 (de) * 1985-02-14 1986-08-28 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul mit einem kunststoffgehaeuse
DE3521572A1 (de) * 1985-06-15 1986-12-18 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul mit keramiksubstrat
DE3528427A1 (de) * 1985-08-08 1987-04-02 Bbc Brown Boveri & Cie Elektrische verbindungslasche fuer halbleiterbauelemente
DE3604882A1 (de) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie Leistungshalbleitermodul und verfahren zur herstellung des moduls
DE3610288A1 (de) * 1986-03-26 1987-10-01 Bbc Brown Boveri & Cie Leistungshalbleitermodul
DE3621994A1 (de) * 1986-07-01 1988-01-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
DE3717489A1 (de) * 1987-05-23 1988-12-01 Asea Brown Boveri Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPS6442160A (en) * 1987-07-28 1989-02-14 Sgs Thomson Microelectronics Semiconductor device
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
JPH0671063B2 (ja) * 1989-09-11 1994-09-07 株式会社東芝 大電力半導体装置
US5202578A (en) * 1989-09-11 1993-04-13 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
FR2660826A1 (fr) * 1990-04-05 1991-10-11 Mcb Sa Boitier economique pour composants electroniques de puissance, a fixer sur dissipateur thermique et son procede de fabrication.
GB2249869B (en) * 1990-09-17 1994-10-12 Fuji Electric Co Ltd Semiconductor device
US5243217A (en) * 1990-11-03 1993-09-07 Fuji Electric Co., Ltd. Sealed semiconductor device with protruding portion
DE4105155C2 (de) * 1991-02-20 1994-07-07 Export Contor Ausenhandelsgese Stromrichterschaltungsanordnung
EP0513410B1 (de) * 1991-05-15 1993-12-15 IXYS Semiconductor GmbH Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls
JPH0521704A (ja) * 1991-07-11 1993-01-29 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0515450U (ja) * 1991-08-06 1993-02-26 株式会社三社電機製作所 電力用半導体モジユール
JPH062714U (ja) * 1992-06-03 1994-01-14 株式会社三社電機製作所 電力用半導体モジュール
JP2838625B2 (ja) * 1992-09-08 1998-12-16 株式会社日立製作所 半導体モジュール
AT406434B (de) * 1993-12-23 2000-05-25 Ixys Semiconductor Gmbh Vorrichtung zur umformung eines dreiphasigen spannungssystems in eine vorgebbare, einen verbraucher speisende gleichspannung
US5744861A (en) * 1995-11-13 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
JP3168901B2 (ja) * 1996-02-22 2001-05-21 株式会社日立製作所 パワー半導体モジュール
DE19719703C5 (de) * 1997-05-09 2005-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleitermodul mit Keramiksubstrat
US7994635B2 (en) * 2007-05-18 2011-08-09 Sansha Electric Manufacturing Co., Ltd. Power semiconductor module

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8203300U1 (de) * 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit Keramiksubstrat
DE8214214U1 (de) * 1982-08-26 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter mit einem quaderförmigen Gehäuse
US3839660A (en) * 1973-02-05 1974-10-01 Gen Motors Corp Power semiconductor device package
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4394530A (en) * 1977-09-19 1983-07-19 Kaufman Lance R Power switching device having improved heat dissipation means
DE2819327C2 (de) * 1978-05-03 1984-10-31 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbaueinheit
US4218694A (en) * 1978-10-23 1980-08-19 Ford Motor Company Rectifying apparatus including six semiconductor diodes sandwiched between ceramic wafers
DE3028178C2 (de) * 1980-07-25 1985-05-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter-Modul
FR2503526A1 (fr) * 1981-04-03 1982-10-08 Silicium Semiconducteur Ssc Boitier et procede de montage et d'interconnexion de composants semiconducteurs de moyenne puissance en boitier unique.
DE3204167A1 (de) * 1982-02-06 1983-08-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726940A1 (fr) * 1994-05-31 1996-05-15 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif

Also Published As

Publication number Publication date
JPS5999753A (ja) 1984-06-08
DE3241508C2 (enExample) 1989-03-30
DE3241508A1 (de) 1984-05-10
FR2535898B3 (enExample) 1984-10-12
FR2535898A3 (fr) 1984-05-11

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