JPH047592B2 - - Google Patents
Info
- Publication number
- JPH047592B2 JPH047592B2 JP17983286A JP17983286A JPH047592B2 JP H047592 B2 JPH047592 B2 JP H047592B2 JP 17983286 A JP17983286 A JP 17983286A JP 17983286 A JP17983286 A JP 17983286A JP H047592 B2 JPH047592 B2 JP H047592B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- thyristor
- conductivity type
- main
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 210000000746 body region Anatomy 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17983286A JPS6336568A (ja) | 1986-07-30 | 1986-07-30 | 複合サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17983286A JPS6336568A (ja) | 1986-07-30 | 1986-07-30 | 複合サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6336568A JPS6336568A (ja) | 1988-02-17 |
| JPH047592B2 true JPH047592B2 (de) | 1992-02-12 |
Family
ID=16072675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17983286A Granted JPS6336568A (ja) | 1986-07-30 | 1986-07-30 | 複合サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6336568A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH076217B2 (ja) * | 1987-10-09 | 1995-01-30 | 日立建機株式会社 | 全旋回式作業機 |
| US5016721A (en) * | 1987-10-09 | 1991-05-21 | Hitachi Construction Machinery Co., Ltd. | Full-turn type working machine |
| DE4240027A1 (de) * | 1992-11-28 | 1994-06-01 | Asea Brown Boveri | MOS-gesteuerte Diode |
| FR2788166B1 (fr) * | 1998-12-31 | 2001-03-09 | St Microelectronics Sa | Interrupteur de puissance a di/dt controle |
| US6326648B1 (en) | 1999-12-20 | 2001-12-04 | Stmicroelectronics S.A. | Power switch with a controlled DI/DT |
-
1986
- 1986-07-30 JP JP17983286A patent/JPS6336568A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6336568A (ja) | 1988-02-17 |
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