JPH0473615B2 - - Google Patents

Info

Publication number
JPH0473615B2
JPH0473615B2 JP60268381A JP26838185A JPH0473615B2 JP H0473615 B2 JPH0473615 B2 JP H0473615B2 JP 60268381 A JP60268381 A JP 60268381A JP 26838185 A JP26838185 A JP 26838185A JP H0473615 B2 JPH0473615 B2 JP H0473615B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
conductivity type
junction
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60268381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62128532A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP26838185A priority Critical patent/JPS62128532A/ja
Publication of JPS62128532A publication Critical patent/JPS62128532A/ja
Publication of JPH0473615B2 publication Critical patent/JPH0473615B2/ja
Granted legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
JP26838185A 1985-11-30 1985-11-30 半導体装置及びその製造方法 Granted JPS62128532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26838185A JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26838185A JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS62128532A JPS62128532A (ja) 1987-06-10
JPH0473615B2 true JPH0473615B2 (enrdf_load_html_response) 1992-11-24

Family

ID=17457696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26838185A Granted JPS62128532A (ja) 1985-11-30 1985-11-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS62128532A (enrdf_load_html_response)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JP2797046B2 (ja) * 1992-07-08 1998-09-17 尚茂 玉蟲 プレーナ構造を有する静電誘導ダイオード
JP2808213B2 (ja) * 1992-07-15 1998-10-08 尚茂 玉蟲 埋込み構造もしくは切込み構造を有する静電誘導ダイオード
JP3252569B2 (ja) * 1993-11-09 2002-02-04 株式会社デンソー 絶縁分離基板及びそれを用いた半導体装置及びその製造方法
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
JP4856419B2 (ja) * 2005-11-29 2012-01-18 ルネサスエレクトロニクス株式会社 双方向プレーナ型ダイオード

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH071791B2 (ja) * 1984-05-09 1995-01-11 株式会社東芝 半導体基板の製造方法

Also Published As

Publication number Publication date
JPS62128532A (ja) 1987-06-10

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term