JPS62128532A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPS62128532A JPS62128532A JP26838185A JP26838185A JPS62128532A JP S62128532 A JPS62128532 A JP S62128532A JP 26838185 A JP26838185 A JP 26838185A JP 26838185 A JP26838185 A JP 26838185A JP S62128532 A JPS62128532 A JP S62128532A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- wafer
- joined
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 18
- 238000010586 diagram Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 239000012535 impurity Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000969 carrier Substances 0.000 abstract description 3
- 230000003746 surface roughness Effects 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26838185A JPS62128532A (ja) | 1985-11-30 | 1985-11-30 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26838185A JPS62128532A (ja) | 1985-11-30 | 1985-11-30 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62128532A true JPS62128532A (ja) | 1987-06-10 |
| JPH0473615B2 JPH0473615B2 (enrdf_load_html_response) | 1992-11-24 |
Family
ID=17457696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26838185A Granted JPS62128532A (ja) | 1985-11-30 | 1985-11-30 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62128532A (enrdf_load_html_response) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629558A (ja) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | プレーナ構造を有する静電誘導ダイオード |
| JPH0637335A (ja) * | 1992-07-15 | 1994-02-10 | Naoshige Tamamushi | 埋込み構造もしくは切込み構造を有する静電誘導ダイオード |
| US5313092A (en) * | 1989-05-12 | 1994-05-17 | Nippon Soken, Inc. | Semiconductor power device having walls of an inverted mesa shape to improve power handling capability |
| US5466303A (en) * | 1994-03-25 | 1995-11-14 | Nippondenso Co., Ltd. | Semiconductor device and manufacturing method therefor |
| US5650354A (en) * | 1993-11-09 | 1997-07-22 | Nippondenso Co., Ltd. | Method for producing semiconductor device |
| JP2007150085A (ja) * | 2005-11-29 | 2007-06-14 | Renesas Technology Corp | 双方向プレーナ型ダイオード |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60236243A (ja) * | 1984-05-09 | 1985-11-25 | Toshiba Corp | 半導体基板の製造方法 |
-
1985
- 1985-11-30 JP JP26838185A patent/JPS62128532A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60236243A (ja) * | 1984-05-09 | 1985-11-25 | Toshiba Corp | 半導体基板の製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5313092A (en) * | 1989-05-12 | 1994-05-17 | Nippon Soken, Inc. | Semiconductor power device having walls of an inverted mesa shape to improve power handling capability |
| JPH0629558A (ja) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | プレーナ構造を有する静電誘導ダイオード |
| JPH0637335A (ja) * | 1992-07-15 | 1994-02-10 | Naoshige Tamamushi | 埋込み構造もしくは切込み構造を有する静電誘導ダイオード |
| US5650354A (en) * | 1993-11-09 | 1997-07-22 | Nippondenso Co., Ltd. | Method for producing semiconductor device |
| US5466303A (en) * | 1994-03-25 | 1995-11-14 | Nippondenso Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP2007150085A (ja) * | 2005-11-29 | 2007-06-14 | Renesas Technology Corp | 双方向プレーナ型ダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473615B2 (enrdf_load_html_response) | 1992-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |