JPH0550867B2 - - Google Patents
Info
- Publication number
- JPH0550867B2 JPH0550867B2 JP60050281A JP5028185A JPH0550867B2 JP H0550867 B2 JPH0550867 B2 JP H0550867B2 JP 60050281 A JP60050281 A JP 60050281A JP 5028185 A JP5028185 A JP 5028185A JP H0550867 B2 JPH0550867 B2 JP H0550867B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- junction
- layer
- type
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 72
- 239000012535 impurity Substances 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000002131 composite material Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60050281A JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60050281A JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61210671A JPS61210671A (ja) | 1986-09-18 |
| JPH0550867B2 true JPH0550867B2 (enrdf_load_html_response) | 1993-07-30 |
Family
ID=12854543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60050281A Granted JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61210671A (enrdf_load_html_response) |
-
1985
- 1985-03-15 JP JP60050281A patent/JPS61210671A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61210671A (ja) | 1986-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0161356B1 (ko) | 반도체 장치의 제조방법 | |
| US5068704A (en) | Method of manufacturing semiconductor device | |
| US7754580B2 (en) | Method for manufacturing semiconductor substrate | |
| JPH0770476B2 (ja) | 半導体装置の製造方法 | |
| JPH0783050B2 (ja) | 半導体素子の製造方法 | |
| JPH0523055B2 (enrdf_load_html_response) | ||
| JP3727827B2 (ja) | 半導体装置 | |
| JPH0544835B2 (enrdf_load_html_response) | ||
| JPH0578949B2 (enrdf_load_html_response) | ||
| US7795103B2 (en) | Bipolar transistors with depleted emitter | |
| JPS61234041A (ja) | 半導体装置及びその製造方法 | |
| JP2543416B2 (ja) | 半導体装置 | |
| JPH0296350A (ja) | 半導体装置の製造方法 | |
| JPS61208268A (ja) | 伝導度変調型半導体装置 | |
| JP7478604B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0550867B2 (enrdf_load_html_response) | ||
| JP3243071B2 (ja) | 誘電体分離型半導体装置 | |
| JPH0473615B2 (enrdf_load_html_response) | ||
| JPH01259546A (ja) | 半導体装置の製造方法 | |
| JPS62163372A (ja) | 電界効果型半導体装置 | |
| JP3465765B2 (ja) | Ｉｇｂｔ用半導体基板の作製方法 | |
| JP4554898B2 (ja) | 半導体装置の製造方法 | |
| KR100201779B1 (ko) | 반도체 장치 및 그 제조방법 | |
| JP2004014748A (ja) | 半導体装置の製造方法 | |
| JPS63138767A (ja) | 縦形半導体装置用半導体基体およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |