JPH0469432B2 - - Google Patents
Info
- Publication number
- JPH0469432B2 JPH0469432B2 JP16726084A JP16726084A JPH0469432B2 JP H0469432 B2 JPH0469432 B2 JP H0469432B2 JP 16726084 A JP16726084 A JP 16726084A JP 16726084 A JP16726084 A JP 16726084A JP H0469432 B2 JPH0469432 B2 JP H0469432B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- pad
- chip
- bonding
- mounting pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は上に集積回路を形成された半導体装
置に関し、特にその装置に含まれるチツプ支持パ
ツドの接地法に関する。
置に関し、特にその装置に含まれるチツプ支持パ
ツドの接地法に関する。
ある種の集積回路はその用途や固有の特徴構造
によつて近傍の他の装置に外部結合され易く、す
なわち装置の表面上の局在電荷により生ずる一般
的不安定を呈する。これらの問題を解決するため
に装置の外囲器の接地用指状導体と集積回路チツ
プを支持するパツトとを各別の導線で接続する
が、これには一般にチツプと支持パツドの縁との
間に十分な空き場があつてそこに導線を接合し得
るようにより大きな支持パツドを用いる必要があ
る。時には取付用パツドにチツプを接合するため
に使用される材料の一部があふれてこの領域の一
部に侵入することがあるが、あふれることを制御
するのは困難であるので、チツプと支持パツドの
縁との間隔をもつと大きくする必要がある。
によつて近傍の他の装置に外部結合され易く、す
なわち装置の表面上の局在電荷により生ずる一般
的不安定を呈する。これらの問題を解決するため
に装置の外囲器の接地用指状導体と集積回路チツ
プを支持するパツトとを各別の導線で接続する
が、これには一般にチツプと支持パツドの縁との
間に十分な空き場があつてそこに導線を接合し得
るようにより大きな支持パツドを用いる必要があ
る。時には取付用パツドにチツプを接合するため
に使用される材料の一部があふれてこの領域の一
部に侵入することがあるが、あふれることを制御
するのは困難であるので、チツプと支持パツドの
縁との間隔をもつと大きくする必要がある。
接地線が支持パツドに接合されない場合、チツ
プと支持パツドの縁との標準的最小間隔は約
125μであるが、接地線を支持パツドに接合する
必要がある場合は約375μである。このような接
地線を必要とする場合は大抵支持パツドの寸法を
次の商用寸法まで増す必要があり、一般にパツド
面積の50%増以上となる。
プと支持パツドの縁との標準的最小間隔は約
125μであるが、接地線を支持パツドに接合する
必要がある場合は約375μである。このような接
地線を必要とする場合は大抵支持パツドの寸法を
次の商用寸法まで増す必要があり、一般にパツド
面積の50%増以上となる。
必要なのは、チツプとパツドの縁との間隔を拡
げずに上記接地線を支持パツドへ取付ける方法で
ある。
げずに上記接地線を支持パツドへ取付ける方法で
ある。
この発明によつて、集積回路装置にチツプ支持
パツドを接地する技法が開示されるが、その装置
は集積回路チツプ内に形成された複数個の電気素
子と、チツプを支持する取付パツドと、取付パツ
ドとチツプの重量を支持するようにされた構造部
材と、チツプ近傍の接地用指状部と、チツプ上に
形成された少なくとも2個の接合パツドとを有
し、そのチツプ取付パツドを接地する方法は、(a)
各接合パツドを電気的に接続する金属化層をチツ
プ上に形成する段階と、(b)一端を接合パツドに、
他端を構造部材に接続した接続線を取付け、これ
によつてオーム接触を形成する段階と、(c)一端を
他の1つの接合パツドに、他端を接地用指状部に
接続した他の接続線を取付け、これによつてオー
ム接触を形成する段階とより成る。
パツドを接地する技法が開示されるが、その装置
は集積回路チツプ内に形成された複数個の電気素
子と、チツプを支持する取付パツドと、取付パツ
ドとチツプの重量を支持するようにされた構造部
材と、チツプ近傍の接地用指状部と、チツプ上に
形成された少なくとも2個の接合パツドとを有
し、そのチツプ取付パツドを接地する方法は、(a)
各接合パツドを電気的に接続する金属化層をチツ
プ上に形成する段階と、(b)一端を接合パツドに、
他端を構造部材に接続した接続線を取付け、これ
によつてオーム接触を形成する段階と、(c)一端を
他の1つの接合パツドに、他端を接地用指状部に
接続した他の接続線を取付け、これによつてオー
ム接触を形成する段階とより成る。
第1図、第2図および第3図は1対の構造部材
14により支持されたチツプ取付用パツド12を
有する導体枠10の一部を示す。各々接触端18
を有する1組の導体16がその接触端18がパツ
ド12から一定間隔をもつて隣接するように取付
パツド12の外周に沿つて配置されている。導体
枠10は銀メツキされ、導体16および構造部材
14の他端を支持する外側の構体(図示せず)を
有する。この導体枠の製造および使用については
当業者に公知であるからこゝではこれ以上説明し
ない。
14により支持されたチツプ取付用パツド12を
有する導体枠10の一部を示す。各々接触端18
を有する1組の導体16がその接触端18がパツ
ド12から一定間隔をもつて隣接するように取付
パツド12の外周に沿つて配置されている。導体
枠10は銀メツキされ、導体16および構造部材
14の他端を支持する外側の構体(図示せず)を
有する。この導体枠の製造および使用については
当業者に公知であるからこゝではこれ以上説明し
ない。
中に集積回路が形成されたチツプ20が当業者
に公知の方法で取付パツド12の表面22に接合
され、そのチツプ20の表面にはその外縁に接近
し接触端18に隣接して1組の小さな接合パツド
30が形成されている。接合パツド30は一般に
アルミニウムで、集積回路内の各点と電気的に接
続され、集積回路を他の回路や装置と相互接続す
る手段となつている。接合パツド30と導体16
は細い接続線32で電気的に接続されている。線
32は一般に金で、約27μの直径を有し、その一
端は当業者に公知の熱音波接合法を利用してパツ
ド30に接合され、他端は同様に適当な導体16
の接触端18に接合されている。超音波接合や熱
圧着も当業者に公知で、使用することもできる
が、熱音波接合が推奨される。
に公知の方法で取付パツド12の表面22に接合
され、そのチツプ20の表面にはその外縁に接近
し接触端18に隣接して1組の小さな接合パツド
30が形成されている。接合パツド30は一般に
アルミニウムで、集積回路内の各点と電気的に接
続され、集積回路を他の回路や装置と相互接続す
る手段となつている。接合パツド30と導体16
は細い接続線32で電気的に接続されている。線
32は一般に金で、約27μの直径を有し、その一
端は当業者に公知の熱音波接合法を利用してパツ
ド30に接合され、他端は同様に適当な導体16
の接触端18に接合されている。超音波接合や熱
圧着も当業者に公知で、使用することもできる
が、熱音波接合が推奨される。
チツプ20に隣接して接触端36を配列した接
地用指状部34はその他端が導体16と同様に導
体枠10の外側の構体に支持されている。接合パ
ツド30aは、第1図に示すように、金属化導体
40を介して集積回路の接地点と電気点に接続さ
れ、パツド30aと接地用指状部34の接触端3
6が細い接続線32aにより上記の方法で電気的
に接続されている。
地用指状部34はその他端が導体16と同様に導
体枠10の外側の構体に支持されている。接合パ
ツド30aは、第1図に示すように、金属化導体
40を介して集積回路の接地点と電気点に接続さ
れ、パツド30aと接地用指状部34の接触端3
6が細い接続線32aにより上記の方法で電気的
に接続されている。
この発明の重要な特徴はチツプ取付パツド12
を電気的に接地用指状部34に取付ける方法であ
る。従来法の装置では、第1図に示すように、接
触端36と取付パツド12の接合点42に細い接
続線32bが接合されているが、これは接合点4
2に適正な接合を行うために十分な空間を確保す
るため必要とする以上に大きな取付パツド12を
必要とする。しかし、この発明は、第2図および
第3図に示すように、細い接続線32cの一端を
1つの構造部材14の接合点に、他端を接合パツ
ド30bに接合することにより同様の効果を果
す。接合パツド30bはさらに第2図に示す接地
導体40に接続されるか、第3図に示すように接
地用指状部34近傍のチツプ20上に形成された
他の接合パツド30cに接続される。この接続は
金属化導体46により成される。後者の場合、細
い接続線32dの一端がパツド30cに接合さ
れ、他端が接地用指状部34の接触端36に接合
される。
を電気的に接地用指状部34に取付ける方法であ
る。従来法の装置では、第1図に示すように、接
触端36と取付パツド12の接合点42に細い接
続線32bが接合されているが、これは接合点4
2に適正な接合を行うために十分な空間を確保す
るため必要とする以上に大きな取付パツド12を
必要とする。しかし、この発明は、第2図および
第3図に示すように、細い接続線32cの一端を
1つの構造部材14の接合点に、他端を接合パツ
ド30bに接合することにより同様の効果を果
す。接合パツド30bはさらに第2図に示す接地
導体40に接続されるか、第3図に示すように接
地用指状部34近傍のチツプ20上に形成された
他の接合パツド30cに接続される。この接続は
金属化導体46により成される。後者の場合、細
い接続線32dの一端がパツド30cに接合さ
れ、他端が接地用指状部34の接触端36に接合
される。
上記構体の使用により実現される重要な利点
は、チツプ取付パツド12が実質的に小さく、金
の接続線32が従来法の構体のそれよりも実質的
に短いことである。最も重要なことは、接続線3
2が短いほど樹脂埋込み工程で曲げを受けにくい
ため、接合部の強度が向上することである。ま
た、取付パツドの接地用接続部の強度も、接合点
44の場所のため、チツプ20と取付パツド12
の接合に用いる材料の溢出による干渉の可能性が
なく、接地用接続線32cが一端をチツプ20上
のアルミニウム接合パツドに、他端を他の全ての
細い接続線32の接合構体と同様の導体枠10上
の銀接合点44に接合されるため向上する。これ
により、従来法の構体におけるように、取付パツ
ド接地用接続線に対して他のすべての接続線32
に対するのと異なる接合動作の必要性がなくな
る。
は、チツプ取付パツド12が実質的に小さく、金
の接続線32が従来法の構体のそれよりも実質的
に短いことである。最も重要なことは、接続線3
2が短いほど樹脂埋込み工程で曲げを受けにくい
ため、接合部の強度が向上することである。ま
た、取付パツドの接地用接続部の強度も、接合点
44の場所のため、チツプ20と取付パツド12
の接合に用いる材料の溢出による干渉の可能性が
なく、接地用接続線32cが一端をチツプ20上
のアルミニウム接合パツドに、他端を他の全ての
細い接続線32の接合構体と同様の導体枠10上
の銀接合点44に接合されるため向上する。これ
により、従来法の構体におけるように、取付パツ
ド接地用接続線に対して他のすべての接続線32
に対するのと異なる接合動作の必要性がなくな
る。
例えば、アール・シー・エー社の集積回路チツ
プCA3084型は普通約6.45mm2の表面積の取付パツ
ドを有する導体枠に取付けられているが、この構
成では取付パツドが一端を接地用指状部に接合さ
れ、他端をチツプの側面と取付パツドの縁との間
の領域で取付パツドに接合された接続線により接
地されている。一方、この発明の原理を使用する
ことにより、同じチツプを約4.13mm2の表面積の取
付パツドを有する導体枠に取付けることができ、
通常の構成の場合よりも取付パツド寸法で36%の
減少になる。同様に、通常構成の金接続線の平均
長さ約1.91mmに対し、この発明におけるそれは約
1.64mmで、接続線の長さが14%減になる。これに
より製造原価の低減が強調される。
プCA3084型は普通約6.45mm2の表面積の取付パツ
ドを有する導体枠に取付けられているが、この構
成では取付パツドが一端を接地用指状部に接合さ
れ、他端をチツプの側面と取付パツドの縁との間
の領域で取付パツドに接合された接続線により接
地されている。一方、この発明の原理を使用する
ことにより、同じチツプを約4.13mm2の表面積の取
付パツドを有する導体枠に取付けることができ、
通常の構成の場合よりも取付パツド寸法で36%の
減少になる。同様に、通常構成の金接続線の平均
長さ約1.91mmに対し、この発明におけるそれは約
1.64mmで、接続線の長さが14%減になる。これに
より製造原価の低減が強調される。
第1図は従来法によるチツプ支持パツドの接地
接続を示す集積回路チツプを取付けた導体枠の一
部の平面図、第2図はこの発明による接地接続を
示す第1図と同様の平面図、第3図は第2図の接
地接続の1変形を示す第2図と同様の平面図であ
る。 12……取付パツド、14……構造部材、20
……チツプ、30a,30b……接合パツド、3
2a,32b……接続線、34……接地用指状
部、46……金属化導体。
接続を示す集積回路チツプを取付けた導体枠の一
部の平面図、第2図はこの発明による接地接続を
示す第1図と同様の平面図、第3図は第2図の接
地接続の1変形を示す第2図と同様の平面図であ
る。 12……取付パツド、14……構造部材、20
……チツプ、30a,30b……接合パツド、3
2a,32b……接続線、34……接地用指状
部、46……金属化導体。
Claims (1)
- 【特許請求の範囲】 1 (イ)複数個の電気部品と集積回路チツプ上に形
成された2個の接合パツドとを有する該集積回路
チツプ、(ロ)前記集積回路チツプを支持する取付パ
ツド、(ハ)前記取付パツドに電気的に取付けられ、
前記取付パツドと前記集積回路チツプの重量を支
持するようにされた構造部材、および(ニ)前記取付
パツドと前記構造部材との両方に電気的に独立で
あつて、前記取付パツドと隣り合う接地用指状
部、とを含む集積回路装置であつて、(a)前記の2
個の接合パツドを電気的に接続する前記集積回路
チツプ上の金属化層、(b)一端が前記2個の接合パ
ツドの一方に電気的に接続され、他端が前記構造
部材に電気的に接続された第1接続線、(c)一端が
前記2個の接合パツドの他方に電気的に接続さ
れ、他端が前記接地用指状部に電気的に接続され
た第2接続線、とを有する集積回路装置。 2 前記集積回路チツプ上に形成され、前記2個
の接合パツドと電気的に独立の第3の接合パツド
と別個の接続線を有し、該別個の接続線の一端が
前記第3の接合パツドに電気的に接続され、他端
が前記接地用指状部に電気的に接続されている、
特許請求の範囲1項に記載の集積回路装置。 3 前記集積回路チツプ上に形成され、前記2個
の接合パツドの一方を前記電気部品の1個に接続
する金属化層を含む特許請求の範囲1項に記載の
集積回路装置。 4 前記接続線が熱圧着によつて接続される特許
請求の範囲2項に記載の集積回路装置。 5 前記接続線が超音波接合によつて接続される
特許請求の範囲2項に記載の集積回路装置。 6 前記接続線が熱音波接合によつて接続される
特許請求の範囲2項に記載の集積回路装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/521,897 US4534105A (en) | 1983-08-10 | 1983-08-10 | Method for grounding a pellet support pad in an integrated circuit device |
US521897 | 1983-08-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6054461A JPS6054461A (ja) | 1985-03-28 |
JPH0469432B2 true JPH0469432B2 (ja) | 1992-11-06 |
Family
ID=24078595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59167260A Granted JPS6054461A (ja) | 1983-08-10 | 1984-08-08 | 集積回路装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US4534105A (ja) |
JP (1) | JPS6054461A (ja) |
KR (1) | KR930002386B1 (ja) |
DE (1) | DE3428881C2 (ja) |
FR (1) | FR2550661B1 (ja) |
GB (1) | GB2144910B (ja) |
IN (1) | IN160929B (ja) |
IT (1) | IT1174170B (ja) |
SE (1) | SE456874B (ja) |
YU (1) | YU119484A (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61108160A (ja) * | 1984-11-01 | 1986-05-26 | Nec Corp | コンデンサ内蔵型半導体装置及びその製造方法 |
EP0214307B1 (en) * | 1985-02-28 | 1991-07-17 | Sony Corporation | Semiconducteur circuit device |
US4920406A (en) * | 1986-02-07 | 1990-04-24 | Fujitsu Limited | Semiconductor device |
US4829362A (en) * | 1986-04-28 | 1989-05-09 | Motorola, Inc. | Lead frame with die bond flag for ceramic packages |
JPS63205930A (ja) * | 1987-02-21 | 1988-08-25 | Ricoh Co Ltd | 半導体集積回路装置の製造方法 |
JP2734463B2 (ja) * | 1989-04-27 | 1998-03-30 | 株式会社日立製作所 | 半導体装置 |
JPH088330B2 (ja) * | 1989-07-19 | 1996-01-29 | 日本電気株式会社 | Loc型リードフレームを備えた半導体集積回路装置 |
US5006919A (en) * | 1990-03-01 | 1991-04-09 | Advanced Micro Devices, Inc. | Integrated circuit package |
JP3011510B2 (ja) * | 1990-12-20 | 2000-02-21 | 株式会社東芝 | 相互連結回路基板を有する半導体装置およびその製造方法 |
KR920018907A (ko) * | 1991-03-23 | 1992-10-22 | 김광호 | 반도체 리드 프레임 |
KR940006187Y1 (ko) * | 1991-10-15 | 1994-09-10 | 금성일렉트론 주식회사 | 반도체장치 |
KR100552353B1 (ko) * | 1992-03-27 | 2006-06-20 | 가부시키가이샤 히타치초엘에스아이시스템즈 | 리이드프레임및그것을사용한반도체집적회로장치와그제조방법 |
US5256598A (en) * | 1992-04-15 | 1993-10-26 | Micron Technology, Inc. | Shrink accommodating lead frame |
KR0177744B1 (ko) * | 1995-08-14 | 1999-03-20 | 김광호 | 전기적 특성이 향상된 반도체 장치 |
US5986334A (en) * | 1996-10-04 | 1999-11-16 | Anam Industrial Co., Ltd. | Semiconductor package having light, thin, simple and compact structure |
EP0954879A1 (de) * | 1997-01-22 | 1999-11-10 | Siemens Aktiengesellschaft | Elektronisches bauelement |
US5780772A (en) * | 1997-01-24 | 1998-07-14 | National Semiconductor Corporation | Solution to mold wire sweep in fine pitch devices |
IT1317559B1 (it) * | 2000-05-23 | 2003-07-09 | St Microelectronics Srl | Telaio di supporto per chip avente interconnessioni a bassa resistenza. |
US20050230850A1 (en) * | 2004-04-20 | 2005-10-20 | Taggart Brian C | Microelectronic assembly having a redistribution conductor over a microelectronic die |
WO2009013665A2 (en) * | 2007-07-23 | 2009-01-29 | Nxp B.V. | A leadframe structure for electronic packages |
CN102201384A (zh) * | 2010-03-22 | 2011-09-28 | 无锡华润安盛科技有限公司 | 一种led驱动电路的小外形封装引线框 |
US9337240B1 (en) * | 2010-06-18 | 2016-05-10 | Altera Corporation | Integrated circuit package with a universal lead frame |
CN102569233A (zh) * | 2010-12-09 | 2012-07-11 | 登丰微电子股份有限公司 | 封装结构 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3685137A (en) * | 1971-05-13 | 1972-08-22 | Rca Corp | Method for manufacturing wire bonded integrated circuit devices |
US3611061A (en) * | 1971-07-07 | 1971-10-05 | Motorola Inc | Multiple lead integrated circuit device and frame member for the fabrication thereof |
US4065851A (en) * | 1974-04-20 | 1978-01-03 | W. C. Heraeus Gmbh | Method of making metallic support carrier for semiconductor elements |
US4068371A (en) * | 1976-07-12 | 1978-01-17 | Miller Charles F | Method for completing wire bonds |
US4142203A (en) * | 1976-12-20 | 1979-02-27 | Avx Corporation | Method of assembling a hermetically sealed semiconductor unit |
JPS5623759A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Resin-sealed semiconductor device and manufacture thereof |
JPS5662352A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Semiconductor integrated circuit device for acoustic amplification circuit |
DE3023528C2 (de) * | 1980-06-24 | 1984-11-29 | W.C. Heraeus Gmbh, 6450 Hanau | Aluminium enthaltender Feinstdraht |
US4454529A (en) * | 1981-01-12 | 1984-06-12 | Avx Corporation | Integrated circuit device having internal dampening for a plurality of power supplies |
GB2091035B (en) * | 1981-01-12 | 1985-01-09 | Avx Corp | Integrated circuit device and sub-assembly |
-
1983
- 1983-08-10 US US06/521,897 patent/US4534105A/en not_active Expired - Lifetime
-
1984
- 1984-02-01 IN IN70/CAL/84A patent/IN160929B/en unknown
- 1984-06-11 IT IT2135084A patent/IT1174170B/it active
- 1984-07-06 YU YU119484A patent/YU119484A/xx unknown
- 1984-07-26 GB GB8419078A patent/GB2144910B/en not_active Expired
- 1984-08-03 SE SE8403978A patent/SE456874B/sv not_active IP Right Cessation
- 1984-08-04 DE DE19843428881 patent/DE3428881C2/de not_active Expired - Fee Related
- 1984-08-07 KR KR840004698A patent/KR930002386B1/ko not_active IP Right Cessation
- 1984-08-08 JP JP59167260A patent/JPS6054461A/ja active Granted
- 1984-08-09 FR FR8412625A patent/FR2550661B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4534105A (en) | 1985-08-13 |
KR850002173A (ko) | 1985-05-06 |
SE456874B (sv) | 1988-11-07 |
GB2144910A (en) | 1985-03-13 |
JPS6054461A (ja) | 1985-03-28 |
FR2550661B1 (fr) | 1988-11-25 |
SE8403978L (sv) | 1985-02-11 |
DE3428881C2 (de) | 1996-05-09 |
GB2144910B (en) | 1986-12-31 |
FR2550661A1 (fr) | 1985-02-15 |
KR930002386B1 (en) | 1993-03-29 |
YU119484A (en) | 1987-08-31 |
SE8403978D0 (sv) | 1984-08-03 |
DE3428881A1 (de) | 1985-02-28 |
IN160929B (ja) | 1987-08-15 |
IT1174170B (it) | 1987-07-01 |
GB8419078D0 (en) | 1984-08-30 |
IT8421350A0 (it) | 1984-06-11 |
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