JPH0467792B2 - - Google Patents

Info

Publication number
JPH0467792B2
JPH0467792B2 JP60100502A JP10050285A JPH0467792B2 JP H0467792 B2 JPH0467792 B2 JP H0467792B2 JP 60100502 A JP60100502 A JP 60100502A JP 10050285 A JP10050285 A JP 10050285A JP H0467792 B2 JPH0467792 B2 JP H0467792B2
Authority
JP
Japan
Prior art keywords
semiconductor
thin film
present
conversion element
sapphire substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60100502A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61259583A (ja
Inventor
Ichiro Shibazaki
Takashi Kajino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP60100502A priority Critical patent/JPS61259583A/ja
Publication of JPS61259583A publication Critical patent/JPS61259583A/ja
Publication of JPH0467792B2 publication Critical patent/JPH0467792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP60100502A 1985-05-14 1985-05-14 半導体磁電変換素子 Granted JPS61259583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Publications (2)

Publication Number Publication Date
JPS61259583A JPS61259583A (ja) 1986-11-17
JPH0467792B2 true JPH0467792B2 (enrdf_load_stackoverflow) 1992-10-29

Family

ID=14275711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60100502A Granted JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Country Status (1)

Country Link
JP (1) JPS61259583A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453727A (en) * 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
JP2014011343A (ja) * 2012-06-29 2014-01-20 Asahi Kasei Electronics Co Ltd ホール素子およびホール素子を用いた半導体装置
US10128434B2 (en) * 2016-12-09 2018-11-13 Rohm Co., Ltd. Hall element module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135632A (ja) * 1982-02-08 1983-08-12 Asahi Chem Ind Co Ltd インジウム−アンチモン−ヒ素系化合物薄膜の製造方法
JPS58153384A (ja) * 1982-03-05 1983-09-12 Asahi Chem Ind Co Ltd 磁電変換素子及び磁電変換素子の製造方法

Also Published As

Publication number Publication date
JPS61259583A (ja) 1986-11-17

Similar Documents

Publication Publication Date Title
TW393567B (en) Magnetic sensor and its manufacturing method
EP0450601B1 (en) Magnetoelectric transducer and process for producing the same
JP2005337866A (ja) 磁性体検出器及び半導体パッケージ
JPS6347983A (ja) 炭化珪素電界効果トランジスタ
HK1000811B (en) Magnetoelectric transducer and process for producing the same
US4584552A (en) Hall element with improved composite substrate
JP2005327859A (ja) 磁気抵抗素子及び回転検出器
JP5048033B2 (ja) 半導体薄膜素子の製造方法
KR940009999B1 (ko) 자전 변환 소자 및 그의 제조법
JPS5948970A (ja) 磁電変換素子
JPH04106988A (ja) ＩｎＡｓホール素子
JPH0467792B2 (enrdf_load_stackoverflow)
JP2004158668A (ja) ハイブリッド磁気センサ及びその製造方法
JPS6068639A (ja) 樹脂封止型半導体装置
JPH06105802B2 (ja) 磁電変換素子
JP2546921B2 (ja) 磁気抵抗素子
JPH0471351B2 (enrdf_load_stackoverflow)
JP2563633B2 (ja) 砒化ガリウム半導体チップの組み立て方法
JPS59191393A (ja) 半導体装置
CN114220862A (zh) 一种GaN垂直MOSFET器件及其制作方法
JPS58166781A (ja) 磁電変換素子
JPS61256776A (ja) 磁電変換素子
JPH01259545A (ja) ＳＯＩ型単結晶ＳｉＣ基板とその製造方法
JPH0462475B2 (enrdf_load_stackoverflow)
CN120576910A (zh) 基于反向极化的高灵敏和超快响应的压电应力传感器

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees