JPS61259583A - 半導体磁電変換素子 - Google Patents

半導体磁電変換素子

Info

Publication number
JPS61259583A
JPS61259583A JP60100502A JP10050285A JPS61259583A JP S61259583 A JPS61259583 A JP S61259583A JP 60100502 A JP60100502 A JP 60100502A JP 10050285 A JP10050285 A JP 10050285A JP S61259583 A JPS61259583 A JP S61259583A
Authority
JP
Japan
Prior art keywords
semiconductor
present
conversion element
electrode
magnetoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60100502A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467792B2 (enrdf_load_stackoverflow
Inventor
Ichiro Shibazaki
一郎 柴崎
Takashi Kajino
隆 楫野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP60100502A priority Critical patent/JPS61259583A/ja
Publication of JPS61259583A publication Critical patent/JPS61259583A/ja
Publication of JPH0467792B2 publication Critical patent/JPH0467792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP60100502A 1985-05-14 1985-05-14 半導体磁電変換素子 Granted JPS61259583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Publications (2)

Publication Number Publication Date
JPS61259583A true JPS61259583A (ja) 1986-11-17
JPH0467792B2 JPH0467792B2 (enrdf_load_stackoverflow) 1992-10-29

Family

ID=14275711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60100502A Granted JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Country Status (1)

Country Link
JP (1) JPS61259583A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453727A (en) * 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
JP2014011343A (ja) * 2012-06-29 2014-01-20 Asahi Kasei Electronics Co Ltd ホール素子およびホール素子を用いた半導体装置
US20190044057A1 (en) * 2016-12-09 2019-02-07 Rohm Co., Ltd. Hall element module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135632A (ja) * 1982-02-08 1983-08-12 Asahi Chem Ind Co Ltd インジウム−アンチモン−ヒ素系化合物薄膜の製造方法
JPS58153384A (ja) * 1982-03-05 1983-09-12 Asahi Chem Ind Co Ltd 磁電変換素子及び磁電変換素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135632A (ja) * 1982-02-08 1983-08-12 Asahi Chem Ind Co Ltd インジウム−アンチモン−ヒ素系化合物薄膜の製造方法
JPS58153384A (ja) * 1982-03-05 1983-09-12 Asahi Chem Ind Co Ltd 磁電変換素子及び磁電変換素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453727A (en) * 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
JP2014011343A (ja) * 2012-06-29 2014-01-20 Asahi Kasei Electronics Co Ltd ホール素子およびホール素子を用いた半導体装置
US20190044057A1 (en) * 2016-12-09 2019-02-07 Rohm Co., Ltd. Hall element module
US10522743B2 (en) * 2016-12-09 2019-12-31 Rohm Co., Ltd. Hall element module

Also Published As

Publication number Publication date
JPH0467792B2 (enrdf_load_stackoverflow) 1992-10-29

Similar Documents

Publication Publication Date Title
US4908685A (en) Magnetoelectric transducer
TW393567B (en) Magnetic sensor and its manufacturing method
EP0450601B1 (en) Magnetoelectric transducer and process for producing the same
JP2005337866A (ja) 磁性体検出器及び半導体パッケージ
JPS6271271A (ja) 炭化珪素半導体の電極構造
US4584552A (en) Hall element with improved composite substrate
JPS6410112B2 (enrdf_load_stackoverflow)
JP2005327859A (ja) 磁気抵抗素子及び回転検出器
JP5048033B2 (ja) 半導体薄膜素子の製造方法
KR940009999B1 (ko) 자전 변환 소자 및 그의 제조법
JPS61259583A (ja) 半導体磁電変換素子
JP4480318B2 (ja) 複合半導体素子及びその製造方法
JPS6068639A (ja) 樹脂封止型半導体装置
JP2013197386A (ja) ホール素子
JPH06105802B2 (ja) 磁電変換素子
JPH02170584A (ja) 磁電変換素子およびその製造方法
JP4308084B2 (ja) 磁性体検出器
JP2610083B2 (ja) 強磁性体磁気抵抗素子
JP4764311B2 (ja) 半導体磁気抵抗装置
JPS59117280A (ja) 半導体発光装置
JPS61269386A (ja) 磁電変換素子
JPH0671105B2 (ja) 磁電変換素子の製造方法
JPS61105857A (ja) 半導体装置の製造方法
JP2563633B2 (ja) 砒化ガリウム半導体チップの組み立て方法
JPS58166781A (ja) 磁電変換素子

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees