JPH0462175B2 - - Google Patents

Info

Publication number
JPH0462175B2
JPH0462175B2 JP15229582A JP15229582A JPH0462175B2 JP H0462175 B2 JPH0462175 B2 JP H0462175B2 JP 15229582 A JP15229582 A JP 15229582A JP 15229582 A JP15229582 A JP 15229582A JP H0462175 B2 JPH0462175 B2 JP H0462175B2
Authority
JP
Japan
Prior art keywords
region
semiconductor substrate
conductivity type
source
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15229582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5941871A (ja
Inventor
Mitsuo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15229582A priority Critical patent/JPS5941871A/ja
Publication of JPS5941871A publication Critical patent/JPS5941871A/ja
Publication of JPH0462175B2 publication Critical patent/JPH0462175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066Gate region of field-effect devices with PN junction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15229582A 1982-08-31 1982-08-31 接合型電界効果半導体装置 Granted JPS5941871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15229582A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15229582A JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS5941871A JPS5941871A (ja) 1984-03-08
JPH0462175B2 true JPH0462175B2 (de) 1992-10-05

Family

ID=15537400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15229582A Granted JPS5941871A (ja) 1982-08-31 1982-08-31 接合型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS5941871A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805003A (en) * 1987-11-10 1989-02-14 Motorola Inc. GaAs MESFET
JP2538984B2 (ja) * 1988-04-20 1996-10-02 株式会社豊田自動織機製作所 静電誘導形半導体装置
DE19548443A1 (de) * 1995-12-22 1997-06-26 Siemens Ag Halbleiteranordnung zur Strombegrenzung
DE19726678A1 (de) * 1997-06-24 1999-01-07 Siemens Ag Passiver Halbleiterstrombegrenzer
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP4848595B2 (ja) * 2001-05-16 2011-12-28 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP4696444B2 (ja) 2003-11-14 2011-06-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
RU2638108C1 (ru) * 2013-12-25 2017-12-11 Кэнон Кабусики Кайся Устройство формирования изображения, система формирования изображения и способ изготовления устройства формирования изображения

Also Published As

Publication number Publication date
JPS5941871A (ja) 1984-03-08

Similar Documents

Publication Publication Date Title
US4053916A (en) Silicon on sapphire MOS transistor
US20140139282A1 (en) Embedded JFETs for High Voltage Applications
KR950034767A (ko) Mis형 반도체장치
JP2547663B2 (ja) 半導体装置
JP2800702B2 (ja) 半導体装置
JPH0462175B2 (de)
JPH05343691A (ja) 縦型絶縁ゲート電界効果トランジスタ
JPH0513387B2 (de)
JPS6159666B2 (de)
JPH04363069A (ja) 縦型半導体装置
JPS5965486A (ja) 接合型電界効果トランジスタ
JPH0473301B2 (de)
JPS6152592B2 (de)
JP2608976B2 (ja) 半導体装置
JPH07142731A (ja) パワーデバイスおよびそれを形成するための方法
JPS6271274A (ja) Mos形半導体装置
JPH09199721A (ja) 電界効果トランジスタ
JPS60262468A (ja) Mos型電界効果トランジスタ
JP3217484B2 (ja) 高耐圧半導体装置
JP4577948B2 (ja) オフセットゲート型電界効果トランジスタ
JP3130645B2 (ja) 高耐圧mosトランジスタ
JPS60124863A (ja) Mos集積回路装置
JPH06209106A (ja) 半導体装置
JP2818416B2 (ja) Mos電界効果トランジスタ
JP2973450B2 (ja) 半導体装置