JPH0462175B2 - - Google Patents
Info
- Publication number
- JPH0462175B2 JPH0462175B2 JP15229582A JP15229582A JPH0462175B2 JP H0462175 B2 JPH0462175 B2 JP H0462175B2 JP 15229582 A JP15229582 A JP 15229582A JP 15229582 A JP15229582 A JP 15229582A JP H0462175 B2 JPH0462175 B2 JP H0462175B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor substrate
- conductivity type
- source
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15229582A JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15229582A JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5941871A JPS5941871A (ja) | 1984-03-08 |
JPH0462175B2 true JPH0462175B2 (de) | 1992-10-05 |
Family
ID=15537400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15229582A Granted JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5941871A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4805003A (en) * | 1987-11-10 | 1989-02-14 | Motorola Inc. | GaAs MESFET |
JP2538984B2 (ja) * | 1988-04-20 | 1996-10-02 | 株式会社豊田自動織機製作所 | 静電誘導形半導体装置 |
DE19548443A1 (de) * | 1995-12-22 | 1997-06-26 | Siemens Ag | Halbleiteranordnung zur Strombegrenzung |
DE19726678A1 (de) * | 1997-06-24 | 1999-01-07 | Siemens Ag | Passiver Halbleiterstrombegrenzer |
US6281521B1 (en) * | 1998-07-09 | 2001-08-28 | Cree Research Inc. | Silicon carbide horizontal channel buffered gate semiconductor devices |
JP4848595B2 (ja) * | 2001-05-16 | 2011-12-28 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP4696444B2 (ja) | 2003-11-14 | 2011-06-08 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
RU2638108C1 (ru) * | 2013-12-25 | 2017-12-11 | Кэнон Кабусики Кайся | Устройство формирования изображения, система формирования изображения и способ изготовления устройства формирования изображения |
-
1982
- 1982-08-31 JP JP15229582A patent/JPS5941871A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5941871A (ja) | 1984-03-08 |
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