JPH0459784B2 - - Google Patents

Info

Publication number
JPH0459784B2
JPH0459784B2 JP1090318A JP9031889A JPH0459784B2 JP H0459784 B2 JPH0459784 B2 JP H0459784B2 JP 1090318 A JP1090318 A JP 1090318A JP 9031889 A JP9031889 A JP 9031889A JP H0459784 B2 JPH0459784 B2 JP H0459784B2
Authority
JP
Japan
Prior art keywords
thin film
substrate
polycrystalline silicon
data line
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1090318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0221656A (ja
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1090318A priority Critical patent/JPH0221656A/ja
Publication of JPH0221656A publication Critical patent/JPH0221656A/ja
Publication of JPH0459784B2 publication Critical patent/JPH0459784B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
JP1090318A 1989-04-10 1989-04-10 ランダム・アクセス・メモリ Granted JPH0221656A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1090318A JPH0221656A (ja) 1989-04-10 1989-04-10 ランダム・アクセス・メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1090318A JPH0221656A (ja) 1989-04-10 1989-04-10 ランダム・アクセス・メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55135634A Division JPS5760868A (en) 1980-09-29 1980-09-29 Cmos memory cell

Publications (2)

Publication Number Publication Date
JPH0221656A JPH0221656A (ja) 1990-01-24
JPH0459784B2 true JPH0459784B2 (enrdf_load_stackoverflow) 1992-09-24

Family

ID=13995178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1090318A Granted JPH0221656A (ja) 1989-04-10 1989-04-10 ランダム・アクセス・メモリ

Country Status (1)

Country Link
JP (1) JPH0221656A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5299736B2 (ja) 2007-09-04 2013-09-25 Nltテクノロジー株式会社 フィルム貼付装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503787A (enrdf_load_stackoverflow) * 1973-05-16 1975-01-16
JPS5311947B2 (enrdf_load_stackoverflow) * 1973-08-04 1978-04-25
JPS5828744B2 (ja) * 1977-05-31 1983-06-17 テキサス インスツルメンツ インコ−ポレイテツド シリコンゲ−ト型集積回路デバイスおよびその製造方法
JPS5562771A (en) * 1978-11-02 1980-05-12 Toshiba Corp Integrated circuit device
JPS5575900U (enrdf_load_stackoverflow) * 1978-11-17 1980-05-24

Also Published As

Publication number Publication date
JPH0221656A (ja) 1990-01-24

Similar Documents

Publication Publication Date Title
US4208781A (en) Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4240097A (en) Field-effect transistor structure in multilevel polycrystalline silicon
US4209716A (en) Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
JPH08204029A (ja) 半導体装置およびその製造方法
US4187602A (en) Static memory cell using field implanted resistance
US4234889A (en) Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
JPH0459784B2 (enrdf_load_stackoverflow)
JPH0421348B2 (enrdf_load_stackoverflow)
JP2782333B2 (ja) 薄膜トランジスタの製造方法
JP2602125B2 (ja) 薄膜トランジスタの製造方法
JPH0459783B2 (enrdf_load_stackoverflow)
JPH0732202B2 (ja) メモリセル
JP2562383B2 (ja) 薄膜トランジスタ
JPH0435903B2 (enrdf_load_stackoverflow)
JPH0421349B2 (enrdf_load_stackoverflow)
JPH04211165A (ja) ランダム・アクセス・メモリ
JPH0682809B2 (ja) 半導体装置の製造方法
JPH04211166A (ja) 薄膜トランジスタ
JPH0677436A (ja) ランダム・アクセス・メモリ
JPH0682810B2 (ja) 半導体装置の製造方法
JPH0214564A (ja) Cmosメモリ・セル
JPH0677435A (ja) 半導体装置
JPH0732203B2 (ja) メモリセル
JPH0669457A (ja) メモリセル
JPH09283640A (ja) スタティック型半導体メモリ装置