JPH0456979B2 - - Google Patents

Info

Publication number
JPH0456979B2
JPH0456979B2 JP60238553A JP23855385A JPH0456979B2 JP H0456979 B2 JPH0456979 B2 JP H0456979B2 JP 60238553 A JP60238553 A JP 60238553A JP 23855385 A JP23855385 A JP 23855385A JP H0456979 B2 JPH0456979 B2 JP H0456979B2
Authority
JP
Japan
Prior art keywords
layer
photosensitive resin
silylating agent
diazo
dihydro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60238553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61107346A (ja
Inventor
Rorando Buruno
Burankuken Augusuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YU SE BE EREKUTORONITSUKUSU SA
Original Assignee
YU SE BE EREKUTORONITSUKUSU SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YU SE BE EREKUTORONITSUKUSU SA filed Critical YU SE BE EREKUTORONITSUKUSU SA
Publication of JPS61107346A publication Critical patent/JPS61107346A/ja
Publication of JPH0456979B2 publication Critical patent/JPH0456979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Compounds Of Unknown Constitution (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
JP60238553A 1984-10-26 1985-10-24 フォトレジスト層中にネガ図形を形成する方法 Granted JPS61107346A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8427149 1984-10-26
GB848427149A GB8427149D0 (en) 1984-10-26 1984-10-26 Resist materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63255722A Division JPH065385B2 (ja) 1984-10-26 1988-10-11 乾式現像用レジスト

Publications (2)

Publication Number Publication Date
JPS61107346A JPS61107346A (ja) 1986-05-26
JPH0456979B2 true JPH0456979B2 (en, 2012) 1992-09-10

Family

ID=10568805

Family Applications (2)

Application Number Title Priority Date Filing Date
JP60238553A Granted JPS61107346A (ja) 1984-10-26 1985-10-24 フォトレジスト層中にネガ図形を形成する方法
JP63255722A Expired - Lifetime JPH065385B2 (ja) 1984-10-26 1988-10-11 乾式現像用レジスト

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP63255722A Expired - Lifetime JPH065385B2 (ja) 1984-10-26 1988-10-11 乾式現像用レジスト

Country Status (11)

Country Link
EP (1) EP0184567B1 (en, 2012)
JP (2) JPS61107346A (en, 2012)
KR (1) KR940004423B1 (en, 2012)
AT (1) ATE48708T1 (en, 2012)
CA (1) CA1275846C (en, 2012)
DE (1) DE3574788D1 (en, 2012)
GB (1) GB8427149D0 (en, 2012)
IE (1) IE56708B1 (en, 2012)
IL (1) IL76702A (en, 2012)
MY (1) MY100941A (en, 2012)
SU (1) SU1498400A3 (en, 2012)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
EP0249457B1 (en) * 1986-06-12 1991-08-21 Matsushita Electric Industrial Co., Ltd. Method for formation of patterns
EP0250762B1 (en) * 1986-06-23 1995-03-08 International Business Machines Corporation Formation of permeable polymeric films or layers via leaching techniques
JPS63165845A (ja) * 1986-12-26 1988-07-09 Toshiba Corp パタ−ン形成方法
CA1286424C (en) * 1987-01-12 1991-07-16 William C. Mccolgin Bilayer lithographic process
NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
JPS6479743A (en) * 1987-09-22 1989-03-24 Nippon Telegraph & Telephone Pattern forming method by dry developing
JP2506133B2 (ja) * 1987-11-18 1996-06-12 日本電信電話株式会社 パタ―ン形成方法
US5272026A (en) * 1987-12-18 1993-12-21 Ucb S.A. Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article
GB8729510D0 (en) * 1987-12-18 1988-02-03 Ucb Sa Photosensitive compositions containing phenolic resins & diazoquinone compounds
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JP2623309B2 (ja) * 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム レジストパターンを得る方法
JP2521329B2 (ja) * 1988-07-04 1996-08-07 シャープ株式会社 半導体装置の製造方法
JPH0269746A (ja) * 1988-08-01 1990-03-08 Internatl Business Mach Corp <Ibm> ホトレジストの形成方法、ポリマー構造体、ホトレジスト
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
JPH02158737A (ja) * 1988-10-31 1990-06-19 Internatl Business Mach Corp <Ibm> レリーフパターンの作成およびその用途
JPH02161432A (ja) * 1988-12-14 1990-06-21 Nec Corp 微細パターン形成方法
JP2848625B2 (ja) * 1989-03-31 1999-01-20 株式会社東芝 パターン形成方法
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JPH043456A (ja) * 1990-04-19 1992-01-08 Nec Corp 能動層積層素子形成方法
US5061604A (en) * 1990-05-04 1991-10-29 Minnesota Mining And Manufacturing Company Negative crystalline photoresists for UV photoimaging
DE69208769T2 (de) * 1991-07-31 1996-07-18 Texas Instruments Inc Hochauflösendes lithographisches Verfahren
US5409434A (en) * 1992-01-30 1995-04-25 Toyota Jidosha Kabushiki Kaisha Control system with failsafe for shift-by-wire automatic transmission
KR100396559B1 (ko) * 2001-11-05 2003-09-02 삼성전자주식회사 일체형 잉크젯 프린트헤드의 제조 방법
JP5324361B2 (ja) * 2009-08-28 2013-10-23 東京応化工業株式会社 表面処理剤及び表面処理方法
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
US4426247A (en) * 1982-04-12 1984-01-17 Nippon Telegraph & Telephone Public Corporation Method for forming micropattern
JPS5961928A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd パタ−ン形成方法
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
WO1985002030A1 (en) * 1983-11-02 1985-05-09 Hughes Aircraft Company GRAFT POLYMERIZED SiO2 LITHOGRAPHIC MASKS
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist

Also Published As

Publication number Publication date
MY100941A (en) 1991-05-31
JPH065385B2 (ja) 1994-01-19
EP0184567A1 (fr) 1986-06-11
IE56708B1 (en) 1991-11-06
IL76702A (en) 1989-07-31
CA1275846C (en) 1990-11-06
JPH0220869A (ja) 1990-01-24
SU1498400A3 (ru) 1989-07-30
DE3574788D1 (de) 1990-01-18
EP0184567B1 (fr) 1989-12-13
IL76702A0 (en) 1986-02-28
IE852643L (en) 1986-04-26
KR860003674A (ko) 1986-05-28
KR940004423B1 (ko) 1994-05-25
GB8427149D0 (en) 1984-12-05
JPS61107346A (ja) 1986-05-26
ATE48708T1 (de) 1989-12-15

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