JPH0456449B2 - - Google Patents

Info

Publication number
JPH0456449B2
JPH0456449B2 JP58226655A JP22665583A JPH0456449B2 JP H0456449 B2 JPH0456449 B2 JP H0456449B2 JP 58226655 A JP58226655 A JP 58226655A JP 22665583 A JP22665583 A JP 22665583A JP H0456449 B2 JPH0456449 B2 JP H0456449B2
Authority
JP
Japan
Prior art keywords
film
metal mesh
film forming
grid
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58226655A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60117715A (ja
Inventor
Zenko Hirose
Hidekazu Kaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58226655A priority Critical patent/JPS60117715A/ja
Publication of JPS60117715A publication Critical patent/JPS60117715A/ja
Publication of JPH0456449B2 publication Critical patent/JPH0456449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58226655A 1983-11-30 1983-11-30 成膜方法 Granted JPS60117715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Publications (2)

Publication Number Publication Date
JPS60117715A JPS60117715A (ja) 1985-06-25
JPH0456449B2 true JPH0456449B2 (enExample) 1992-09-08

Family

ID=16848579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226655A Granted JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Country Status (1)

Country Link
JP (1) JPS60117715A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630850Y2 (ja) * 1989-04-25 1994-08-17 日本真空技術株式会社 プラズマｃｖｄ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698820A (en) * 1980-01-09 1981-08-08 Nec Corp Preparation of amorphous semiconductor film
JPS56104433A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor corresponding to crystalline semiconductor
JPS5766639A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device

Also Published As

Publication number Publication date
JPS60117715A (ja) 1985-06-25

Similar Documents

Publication Publication Date Title
US4465529A (en) Method of producing semiconductor device
US4173661A (en) Method for depositing thin layers of materials by decomposing a gas to yield a plasma
EP0717127B1 (en) Plasma processing method and apparatus
EP0002383A1 (en) Method and apparatus for depositing semiconductor and other films
JPH0713947B2 (ja) 薄膜トランジスタアレイの製造装置
JP3501668B2 (ja) プラズマｃｖｄ方法及びプラズマｃｖｄ装置
JP2582553B2 (ja) プラズマｃｖｄ法による機能性堆積膜形成装置
JPS63197329A (ja) プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法
JP3630831B2 (ja) 堆積膜の形成方法
GB2148947A (en) Method of depositing an amorphous semiconductor layer from a glow discharge
JPH0456449B2 (enExample)
US5718769A (en) Plasma processing apparatus
JPS5698820A (en) Preparation of amorphous semiconductor film
JPH0620038B2 (ja) プラズマ気相反応装置
JPH0622203B2 (ja) アモルフアス半導体薄膜生成装置
KR100419383B1 (ko) 피-아이-엔(p-i-n) 비정질 실리콘 태양전지의 제조방법
JPS62235471A (ja) プラズマｃｖｄ法による堆積膜形成装置
JP2925310B2 (ja) 堆積膜形成方法
JP2867150B2 (ja) マイクロ波プラズマｃｖｄ装置
JPS61256625A (ja) 薄膜半導体素子の製造方法
JP2609866B2 (ja) マイクロ波プラズマｃｖｄ装置
JPS61189625A (ja) 堆積膜形成法
JPS6332863B2 (enExample)
JPH0831422B2 (ja) 半導体装置の製造方法
JPH0722638A (ja) 半導体装置