JPS60117715A - 成膜方法 - Google Patents

成膜方法

Info

Publication number
JPS60117715A
JPS60117715A JP58226655A JP22665583A JPS60117715A JP S60117715 A JPS60117715 A JP S60117715A JP 58226655 A JP58226655 A JP 58226655A JP 22665583 A JP22665583 A JP 22665583A JP S60117715 A JPS60117715 A JP S60117715A
Authority
JP
Japan
Prior art keywords
film
grid
plasma
substrate
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58226655A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456449B2 (enExample
Inventor
Zenko Hirose
全孝 廣瀬
Hidekazu Kaga
英一 加賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58226655A priority Critical patent/JPS60117715A/ja
Publication of JPS60117715A publication Critical patent/JPS60117715A/ja
Publication of JPH0456449B2 publication Critical patent/JPH0456449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24
    • H10P14/3411

Landscapes

  • Photovoltaic Devices (AREA)
JP58226655A 1983-11-30 1983-11-30 成膜方法 Granted JPS60117715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Publications (2)

Publication Number Publication Date
JPS60117715A true JPS60117715A (ja) 1985-06-25
JPH0456449B2 JPH0456449B2 (enExample) 1992-09-08

Family

ID=16848579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226655A Granted JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Country Status (1)

Country Link
JP (1) JPS60117715A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140972U (enExample) * 1989-04-25 1990-11-26

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698820A (en) * 1980-01-09 1981-08-08 Nec Corp Preparation of amorphous semiconductor film
JPS56104433A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor corresponding to crystalline semiconductor
JPS5766639A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698820A (en) * 1980-01-09 1981-08-08 Nec Corp Preparation of amorphous semiconductor film
JPS56104433A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor corresponding to crystalline semiconductor
JPS5766639A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140972U (enExample) * 1989-04-25 1990-11-26

Also Published As

Publication number Publication date
JPH0456449B2 (enExample) 1992-09-08

Similar Documents

Publication Publication Date Title
US4465529A (en) Method of producing semiconductor device
EP0002383B1 (en) Method and apparatus for depositing semiconductor and other films
Klemberg-Sapieha et al. Dual microwave-rf plasma deposition of functional coatings
JPS61164219A (ja) 薄膜トランジスタアレイの製造装置
JP3501668B2 (ja) プラズマcvd方法及びプラズマcvd装置
JPS63197329A (ja) プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法
EP0582228A1 (en) Process for forming amorphous silicon hydride film
JPS60103626A (ja) プラズマ陽極酸化装置
JP2990668B2 (ja) 薄膜形成装置
Kruzelecky et al. The preparation of amorphous Si: H thin films for optoelectronic applications by glow discharge dissociation of SiH4 using a direct‐current saddle‐field plasma chamber
JPS60117715A (ja) 成膜方法
CN110845152B (zh) 一种改性胶体量子点薄膜的声表面波气体传感器及其制备方法
KR900007050B1 (ko) 반도체 장치의 제조방법
JP3501669B2 (ja) プラズマcvd法による堆積膜形成方法、及びプラズマ発生用高周波電極と該電極で構成したプラズマcvd装置
EP0140130A2 (en) Process and apparatus for preparing semiconductor layer
JP2890032B2 (ja) シリコン薄膜の成膜方法
JPS57153436A (en) Semiconductor device
JPS6063919A (ja) 表面処理装置
JPS63142627A (ja) 半導体薄膜の製造装置
JPH03146673A (ja) 薄膜堆積法及び薄膜堆積装置
JP2000114188A (ja) 非単結晶半導体薄膜の製造方法
JPS62238370A (ja) プラズマcvd装置
Omrani et al. Effects of glow-discharge parameters on silicon coating thickness deposited on 316 stainless steel samples
JPH1167673A (ja) プラズマ化学蒸着装置及び成膜方法
JPS5685877A (en) Treatment of amorphous semiconductor film