JPS60117715A - 成膜方法 - Google Patents

成膜方法

Info

Publication number
JPS60117715A
JPS60117715A JP58226655A JP22665583A JPS60117715A JP S60117715 A JPS60117715 A JP S60117715A JP 58226655 A JP58226655 A JP 58226655A JP 22665583 A JP22665583 A JP 22665583A JP S60117715 A JPS60117715 A JP S60117715A
Authority
JP
Japan
Prior art keywords
film
grid
plasma
substrate
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58226655A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456449B2 (enExample
Inventor
Zenko Hirose
全孝 廣瀬
Hidekazu Kaga
英一 加賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58226655A priority Critical patent/JPS60117715A/ja
Publication of JPS60117715A publication Critical patent/JPS60117715A/ja
Publication of JPH0456449B2 publication Critical patent/JPH0456449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58226655A 1983-11-30 1983-11-30 成膜方法 Granted JPS60117715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58226655A JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Publications (2)

Publication Number Publication Date
JPS60117715A true JPS60117715A (ja) 1985-06-25
JPH0456449B2 JPH0456449B2 (enExample) 1992-09-08

Family

ID=16848579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226655A Granted JPS60117715A (ja) 1983-11-30 1983-11-30 成膜方法

Country Status (1)

Country Link
JP (1) JPS60117715A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140972U (enExample) * 1989-04-25 1990-11-26

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698820A (en) * 1980-01-09 1981-08-08 Nec Corp Preparation of amorphous semiconductor film
JPS56104433A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor corresponding to crystalline semiconductor
JPS5766639A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698820A (en) * 1980-01-09 1981-08-08 Nec Corp Preparation of amorphous semiconductor film
JPS56104433A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor corresponding to crystalline semiconductor
JPS5766639A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140972U (enExample) * 1989-04-25 1990-11-26

Also Published As

Publication number Publication date
JPH0456449B2 (enExample) 1992-09-08

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