JPH0455323B2 - - Google Patents

Info

Publication number
JPH0455323B2
JPH0455323B2 JP58146398A JP14639883A JPH0455323B2 JP H0455323 B2 JPH0455323 B2 JP H0455323B2 JP 58146398 A JP58146398 A JP 58146398A JP 14639883 A JP14639883 A JP 14639883A JP H0455323 B2 JPH0455323 B2 JP H0455323B2
Authority
JP
Japan
Prior art keywords
film
light
photoresist
photoresist film
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58146398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6038821A (ja
Inventor
Toshihiko Tanaka
Norio Hasegawa
Tetsuya Hayashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58146398A priority Critical patent/JPS6038821A/ja
Publication of JPS6038821A publication Critical patent/JPS6038821A/ja
Publication of JPH0455323B2 publication Critical patent/JPH0455323B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58146398A 1983-08-12 1983-08-12 エッチング方法 Granted JPS6038821A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146398A JPS6038821A (ja) 1983-08-12 1983-08-12 エッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146398A JPS6038821A (ja) 1983-08-12 1983-08-12 エッチング方法

Publications (2)

Publication Number Publication Date
JPS6038821A JPS6038821A (ja) 1985-02-28
JPH0455323B2 true JPH0455323B2 (en, 2012) 1992-09-03

Family

ID=15406797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146398A Granted JPS6038821A (ja) 1983-08-12 1983-08-12 エッチング方法

Country Status (1)

Country Link
JP (1) JPS6038821A (en, 2012)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2578930B2 (ja) * 1988-08-18 1997-02-05 松下電器産業株式会社 パターン形成方法
KR100258494B1 (ko) * 1992-06-02 2000-06-15 미우라 아끼라 레지스트 표면 반사 방지막 형성 조성물 및 패턴 형성방법
JPH0697065A (ja) * 1992-09-17 1994-04-08 Mitsubishi Electric Corp 微細レジストパターンの形成方法
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
JP3851594B2 (ja) 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
WO2005081063A1 (ja) * 2004-02-20 2005-09-01 Daikin Industries, Ltd. 液浸リソグラフィーに用いるレジスト積層体
JP4355944B2 (ja) 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4697406B2 (ja) 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物，レジスト保護膜材料及びパターン形成方法
US8323872B2 (en) 2005-06-15 2012-12-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
TWI382280B (zh) 2005-07-27 2013-01-11 信越化學工業股份有限公司 光阻保護性塗覆材料以及圖形化的方法
US7771913B2 (en) 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7759047B2 (en) 2006-05-26 2010-07-20 Shin-Etsu Chemical Co., Ltd. Resist protective film composition and patterning process
JP4571598B2 (ja) 2006-06-27 2010-10-27 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4980038B2 (ja) 2006-09-20 2012-07-18 東京応化工業株式会社 保護膜形成用材料及びホトレジストパターンの形成方法
JP4895030B2 (ja) 2006-10-04 2012-03-14 信越化学工業株式会社 高分子化合物、レジスト保護膜材料、及びパターン形成方法
JP5010569B2 (ja) 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5071658B2 (ja) 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
JP5131461B2 (ja) 2008-02-14 2013-01-30 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP5324290B2 (ja) 2008-04-03 2013-10-23 東京応化工業株式会社 反射防止膜形成材料、およびこれを用いたレジストパターン形成方法
JP5381298B2 (ja) 2008-05-12 2014-01-08 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4650644B2 (ja) 2008-05-12 2011-03-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
US8431323B2 (en) 2008-10-30 2013-04-30 Shin-Etsu Chemical Co., Ltd. Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process
JP4822028B2 (ja) 2008-12-02 2011-11-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4748331B2 (ja) 2008-12-02 2011-08-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5170456B2 (ja) 2009-04-16 2013-03-27 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498182A (en, 2012) * 1972-05-10 1974-01-24
JPS4994267A (en, 2012) * 1973-01-10 1974-09-06
JPS5293273A (en) * 1976-01-31 1977-08-05 Nippon Telegr & Teleph Corp <Ntt> Fine pattern forming method
JPS533821A (en) * 1976-07-01 1978-01-13 Fujitsu Ltd Exposure method
JPS54111285A (en) * 1978-02-20 1979-08-31 Nec Corp Production of semiconductor device
DE2911503A1 (de) * 1979-03-23 1980-09-25 Siemens Ag Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte
JPS5812328A (ja) * 1981-07-16 1983-01-24 Fujitsu Ltd 半導体装置の製造方法
JPS5990927A (ja) * 1982-11-16 1984-05-25 Toshiba Corp ホトリソグラフイ法

Also Published As

Publication number Publication date
JPS6038821A (ja) 1985-02-28

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