JPH0450754B2 - - Google Patents

Info

Publication number
JPH0450754B2
JPH0450754B2 JP57233790A JP23379082A JPH0450754B2 JP H0450754 B2 JPH0450754 B2 JP H0450754B2 JP 57233790 A JP57233790 A JP 57233790A JP 23379082 A JP23379082 A JP 23379082A JP H0450754 B2 JPH0450754 B2 JP H0450754B2
Authority
JP
Japan
Prior art keywords
insulating layer
layer
gate
semiconductor memory
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57233790A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59124768A (ja
Inventor
Takashi Kato
Shinpei Tsucha
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57233790A priority Critical patent/JPS59124768A/ja
Publication of JPS59124768A publication Critical patent/JPS59124768A/ja
Publication of JPH0450754B2 publication Critical patent/JPH0450754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP57233790A 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法 Granted JPS59124768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57233790A JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57233790A JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59124768A JPS59124768A (ja) 1984-07-18
JPH0450754B2 true JPH0450754B2 (enrdf_load_stackoverflow) 1992-08-17

Family

ID=16960603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57233790A Granted JPS59124768A (ja) 1982-12-29 1982-12-29 不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59124768A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834313B2 (ja) * 1989-10-09 1996-03-29 株式会社東芝 半導体装置及びその製造方法
US5229595A (en) * 1991-12-19 1993-07-20 Xerox Corporation Fluid-filled color filtered input scanner arrays
KR100456580B1 (ko) * 2001-06-28 2004-11-09 삼성전자주식회사 비휘발성 반도체 메모리 장치의 부유 트랩형 메모리 소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840668A (enrdf_load_stackoverflow) * 1971-09-28 1973-06-14
JPS4979692A (enrdf_load_stackoverflow) * 1972-12-07 1974-08-01
JPS49116982A (enrdf_load_stackoverflow) * 1973-12-14 1974-11-08

Also Published As

Publication number Publication date
JPS59124768A (ja) 1984-07-18

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