JPH0430755B2 - - Google Patents

Info

Publication number
JPH0430755B2
JPH0430755B2 JP59150386A JP15038684A JPH0430755B2 JP H0430755 B2 JPH0430755 B2 JP H0430755B2 JP 59150386 A JP59150386 A JP 59150386A JP 15038684 A JP15038684 A JP 15038684A JP H0430755 B2 JPH0430755 B2 JP H0430755B2
Authority
JP
Japan
Prior art keywords
insulating film
region
charge injection
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59150386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129177A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15038684A priority Critical patent/JPS6129177A/ja
Publication of JPS6129177A publication Critical patent/JPS6129177A/ja
Publication of JPH0430755B2 publication Critical patent/JPH0430755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection

Landscapes

  • Non-Volatile Memory (AREA)
JP15038684A 1984-07-19 1984-07-19 半導体不揮発性メモリ Granted JPS6129177A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15038684A JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15038684A JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS6129177A JPS6129177A (ja) 1986-02-10
JPH0430755B2 true JPH0430755B2 (enrdf_load_stackoverflow) 1992-05-22

Family

ID=15495856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15038684A Granted JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS6129177A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050056200A (ko) * 2002-08-13 2005-06-14 제네럴 세미컨덕터, 인코포레이티드 임계전압을 프로그래밍할 수 있는 ｄｍｏｓ 소자
JP5644757B2 (ja) 2011-12-28 2014-12-24 株式会社日本自動車部品総合研究所 圧力制御装置

Also Published As

Publication number Publication date
JPS6129177A (ja) 1986-02-10

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