JPH0442917Y2 - - Google Patents
Info
- Publication number
- JPH0442917Y2 JPH0442917Y2 JP1985014071U JP1407185U JPH0442917Y2 JP H0442917 Y2 JPH0442917 Y2 JP H0442917Y2 JP 1985014071 U JP1985014071 U JP 1985014071U JP 1407185 U JP1407185 U JP 1407185U JP H0442917 Y2 JPH0442917 Y2 JP H0442917Y2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- conductor layer
- base
- region
- diagonal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 65
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985014071U JPH0442917Y2 (cs) | 1985-02-01 | 1985-02-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985014071U JPH0442917Y2 (cs) | 1985-02-01 | 1985-02-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61129355U JPS61129355U (cs) | 1986-08-13 |
| JPH0442917Y2 true JPH0442917Y2 (cs) | 1992-10-12 |
Family
ID=30498658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985014071U Expired JPH0442917Y2 (cs) | 1985-02-01 | 1985-02-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442917Y2 (cs) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115857A (ja) * | 1981-12-28 | 1983-07-09 | Mitsubishi Electric Corp | 半導体装置 |
-
1985
- 1985-02-01 JP JP1985014071U patent/JPH0442917Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115857A (ja) * | 1981-12-28 | 1983-07-09 | Mitsubishi Electric Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61129355U (cs) | 1986-08-13 |
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