JPH0430746B2 - - Google Patents

Info

Publication number
JPH0430746B2
JPH0430746B2 JP58159505A JP15950583A JPH0430746B2 JP H0430746 B2 JPH0430746 B2 JP H0430746B2 JP 58159505 A JP58159505 A JP 58159505A JP 15950583 A JP15950583 A JP 15950583A JP H0430746 B2 JPH0430746 B2 JP H0430746B2
Authority
JP
Japan
Prior art keywords
channel
silicon layer
semiconductor device
substrate
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58159505A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6052052A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58159505A priority Critical patent/JPS6052052A/ja
Publication of JPS6052052A publication Critical patent/JPS6052052A/ja
Publication of JPH0430746B2 publication Critical patent/JPH0430746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58159505A 1983-08-31 1983-08-31 相補型ｍｉｓ半導体装置 Granted JPS6052052A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159505A JPS6052052A (ja) 1983-08-31 1983-08-31 相補型ｍｉｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159505A JPS6052052A (ja) 1983-08-31 1983-08-31 相補型ｍｉｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS6052052A JPS6052052A (ja) 1985-03-23
JPH0430746B2 true JPH0430746B2 (enrdf_load_html_response) 1992-05-22

Family

ID=15695232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159505A Granted JPS6052052A (ja) 1983-08-31 1983-08-31 相補型ｍｉｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS6052052A (enrdf_load_html_response)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4963140B2 (ja) * 2000-03-02 2012-06-27 株式会社半導体エネルギー研究所 半導体装置
JP2003086708A (ja) 2000-12-08 2003-03-20 Hitachi Ltd 半導体装置及びその製造方法
JP4030383B2 (ja) 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US7041576B2 (en) * 2004-05-28 2006-05-09 Freescale Semiconductor, Inc. Separately strained N-channel and P-channel transistors
JP4963328B2 (ja) * 2010-08-05 2012-06-27 株式会社半導体エネルギー研究所 半導体装置
JP5042378B2 (ja) * 2011-07-04 2012-10-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器

Also Published As

Publication number Publication date
JPS6052052A (ja) 1985-03-23

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