JPH0429158B2 - - Google Patents

Info

Publication number
JPH0429158B2
JPH0429158B2 JP57131976A JP13197682A JPH0429158B2 JP H0429158 B2 JPH0429158 B2 JP H0429158B2 JP 57131976 A JP57131976 A JP 57131976A JP 13197682 A JP13197682 A JP 13197682A JP H0429158 B2 JPH0429158 B2 JP H0429158B2
Authority
JP
Japan
Prior art keywords
word
address
unit
cell array
unit address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57131976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5924492A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57131976A priority Critical patent/JPS5924492A/ja
Publication of JPS5924492A publication Critical patent/JPS5924492A/ja
Publication of JPH0429158B2 publication Critical patent/JPH0429158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57131976A 1982-07-30 1982-07-30 半導体記憶装置の構成方法 Granted JPS5924492A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57131976A JPS5924492A (ja) 1982-07-30 1982-07-30 半導体記憶装置の構成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131976A JPS5924492A (ja) 1982-07-30 1982-07-30 半導体記憶装置の構成方法

Publications (2)

Publication Number Publication Date
JPS5924492A JPS5924492A (ja) 1984-02-08
JPH0429158B2 true JPH0429158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-18

Family

ID=15070625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57131976A Granted JPS5924492A (ja) 1982-07-30 1982-07-30 半導体記憶装置の構成方法

Country Status (1)

Country Link
JP (1) JPS5924492A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680807B2 (ja) * 1984-07-02 1994-10-12 富士通株式会社 ゲートアレイｌｓｉ装置
JPS6122648A (ja) * 1984-07-02 1986-01-31 Fujitsu Ltd マスタスライス型半導体集積回路装置
DE3683056D1 (de) * 1986-08-11 1992-01-30 Philips Nv Integrierter halbleiterspeicher und integrierter signalprozessor mit solchem speicher.
JPH0346192A (ja) * 1989-07-14 1991-02-27 Hitachi Ltd 半導体装置及び半導体メモリ装置
DE4220878C1 (de) * 1992-06-25 1993-11-11 Siemens Ag Verfahren zum Herstellen eines integrierten Halbleiterspeichers mit vorgegebener Speicherkapazität

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624946A (en) * 1979-08-08 1981-03-10 Fujitsu Ltd Master slice type integrated circuit

Also Published As

Publication number Publication date
JPS5924492A (ja) 1984-02-08

Similar Documents

Publication Publication Date Title
JPS6412096B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US6346825B1 (en) Block RAM with configurable data width and parity for use in a field programmable gate array
US5854763A (en) Integrated circuit with non-binary decoding and data access
JPH0697560B2 (ja) 半導体記憶装置
US6038159A (en) Memory architecture and decoder addressing
JPH0520834B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR100240913B1 (ko) 반도체 메모리 시스템, 프로그래머블 어레이 및 엑세스 시간 감소 방법 및 시스템
JPH0429158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2982902B2 (ja) 半導体メモリ
JP3833022B2 (ja) 半導体装置
JP3155893B2 (ja) 半導体記憶装置
US6249466B1 (en) Row redundancy scheme
JP3222545B2 (ja) 半導体記憶装置
JPH01500468A (ja) ２個以上の集積半導体回路の集合体
JP2534652B2 (ja) 半導体集積回路
JP2708232B2 (ja) 半導体記憶装置
JP3020614B2 (ja) 半導体記憶装置
JP2561640B2 (ja) 半導体記憶装置
JPS61246996A (ja) 直交メモリ
KR102324988B1 (ko) 메모리 장치의 어레이 에지 리피터
JPS6323336A (ja) マスタスライス方式半導体集積回路
JP4121360B2 (ja) 半導体記憶装置
JPS59225615A (ja) ゲ−トアレイ内のｒａｍ構成方法
US6366502B1 (en) Circuitry for reading from and writing to memory cells
JP2786020B2 (ja) 半導体メモリ装置