JPH0427693B2 - - Google Patents
Info
- Publication number
- JPH0427693B2 JPH0427693B2 JP12449783A JP12449783A JPH0427693B2 JP H0427693 B2 JPH0427693 B2 JP H0427693B2 JP 12449783 A JP12449783 A JP 12449783A JP 12449783 A JP12449783 A JP 12449783A JP H0427693 B2 JPH0427693 B2 JP H0427693B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- films
- dopos
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 138
- 239000010409 thin film Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 32
- 239000010410 layer Substances 0.000 description 18
- 238000001444 catalytic combustion detection Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- -1 Na ions Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12449783A JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12449783A JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6016446A JPS6016446A (ja) | 1985-01-28 |
JPH0427693B2 true JPH0427693B2 (enrdf_load_stackoverflow) | 1992-05-12 |
Family
ID=14886950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12449783A Granted JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6016446A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01265541A (ja) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | 半導体装置 |
JPH03161973A (ja) * | 1989-11-21 | 1991-07-11 | Nec Corp | 固体撮像装置 |
JPH03225915A (ja) * | 1990-01-31 | 1991-10-04 | Sharp Corp | 固体撮像素子 |
-
1983
- 1983-07-08 JP JP12449783A patent/JPS6016446A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6016446A (ja) | 1985-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0580148B2 (enrdf_load_stackoverflow) | ||
JPS60234372A (ja) | 半導体装置の製造方法 | |
JPH0427693B2 (enrdf_load_stackoverflow) | ||
JPH05251637A (ja) | 半導体装置およびその製造方法 | |
JP2950620B2 (ja) | 半導体装置 | |
JP3264402B2 (ja) | 半導体装置 | |
JPH07122518A (ja) | コンタクト電極の形成方法 | |
JP3271090B2 (ja) | 半導体装置の製法 | |
JPS6213826B2 (enrdf_load_stackoverflow) | ||
JP2767104B2 (ja) | 半導体装置の製造方法 | |
JPH01248536A (ja) | 半導体装置の製造方法 | |
JP3189399B2 (ja) | 半導体装置の製造方法 | |
JPH045823A (ja) | 半導体装置及びその製造方法 | |
JP2520721B2 (ja) | 半導体記憶装置及びその製造方法 | |
JP3189320B2 (ja) | 半導体装置の製造方法 | |
JP2664458B2 (ja) | 素子分離方法 | |
JP2702865B2 (ja) | 薄膜トランジスタ | |
JPH05343669A (ja) | 半導体装置およびその製造方法 | |
JPH0714052B2 (ja) | 電荷結合デバイスの電極形成方法 | |
JPS6312169A (ja) | 半導体装置の製造方法 | |
JPS6149439A (ja) | 半導体装置の製造方法 | |
JPH09270463A (ja) | コンタクト孔の形成方法 | |
JPH01144671A (ja) | 半導体メモリ装置の製造方法 | |
JPH03181135A (ja) | 半導体装置の製造方法 | |
JPH1012719A (ja) | 誘電体分離基板及びその製造方法 |