JPS6016446A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6016446A JPS6016446A JP12449783A JP12449783A JPS6016446A JP S6016446 A JPS6016446 A JP S6016446A JP 12449783 A JP12449783 A JP 12449783A JP 12449783 A JP12449783 A JP 12449783A JP S6016446 A JPS6016446 A JP S6016446A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- thin film
- insulating film
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12449783A JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12449783A JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6016446A true JPS6016446A (ja) | 1985-01-28 |
| JPH0427693B2 JPH0427693B2 (enrdf_load_stackoverflow) | 1992-05-12 |
Family
ID=14886950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12449783A Granted JPS6016446A (ja) | 1983-07-08 | 1983-07-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016446A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01265541A (ja) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | 半導体装置 |
| JPH03161973A (ja) * | 1989-11-21 | 1991-07-11 | Nec Corp | 固体撮像装置 |
| JPH03225915A (ja) * | 1990-01-31 | 1991-10-04 | Sharp Corp | 固体撮像素子 |
-
1983
- 1983-07-08 JP JP12449783A patent/JPS6016446A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01265541A (ja) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | 半導体装置 |
| JPH03161973A (ja) * | 1989-11-21 | 1991-07-11 | Nec Corp | 固体撮像装置 |
| JPH03225915A (ja) * | 1990-01-31 | 1991-10-04 | Sharp Corp | 固体撮像素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0427693B2 (enrdf_load_stackoverflow) | 1992-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100243881B1 (ko) | 반도체 기판 및 반도체장치의 제조방법 | |
| US5599722A (en) | SOI semiconductor device and method of producing same wherein warpage is reduced in the semiconductor device | |
| JPH0580148B2 (enrdf_load_stackoverflow) | ||
| US5882981A (en) | Mesa isolation Refill Process for Silicon on Insulator Technology Using Flowage Oxides as the Refill Material | |
| US5856230A (en) | Method for making field oxide of semiconductor device | |
| JPH098124A (ja) | 絶縁分離基板及びその製造方法 | |
| JPS6016446A (ja) | 半導体装置の製造方法 | |
| JPH04738A (ja) | 半導体装置の製造方法 | |
| US9082716B2 (en) | Method of manufacturing semiconductor device | |
| US4885261A (en) | Method for isolating a semiconductor element | |
| JPS6126240A (ja) | 絶縁分離方法 | |
| JPH11284060A (ja) | 半導体装置及びその製造方法 | |
| JPH0964319A (ja) | Soi基板およびその製造方法 | |
| JP3049904B2 (ja) | 誘電体分離ウエハの製造方法 | |
| JPH02219252A (ja) | 半導体装置の製造方法 | |
| JP3539102B2 (ja) | トレンチ分離型半導体基板の製造方法 | |
| JPS61119056A (ja) | 半導体装置の製造方法 | |
| JP2877201B2 (ja) | 液晶表示装置用素子基板の製造方法 | |
| JPS62232143A (ja) | 半導体装置の製造方法 | |
| JPS5840338B2 (ja) | 半導体装置の製造法 | |
| JP3189320B2 (ja) | 半導体装置の製造方法 | |
| JPS61289649A (ja) | 半導体装置の製造方法 | |
| JPH03268444A (ja) | 半導体装置の製造方法 | |
| JP2664458B2 (ja) | 素子分離方法 | |
| KR950002175B1 (ko) | 박막 센서용 Si 박막 형성방법 |